A. Z. Rakhmatov

15 та иш

“FOTON” Joint Stock Company, Tashkent, Uzbekistan

Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region
R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +6
МақолаAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20236 иқтибос
ABI
Dependence of the accuracy of the silicon diode temperature sensors for cryogenic thermometry on the spread of their parameters
R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5
МақолаCalibration and Measurement TechniquesLow Temperature Physics20234 иқтибос
ABI
Influence of neutron radiation on breakdown voltage of silicon voltage limiter
A. Z. Rakhmatov, Д. А. Петров, A. V. Karimov +2
МақолаEngineering Diagnostics and ReliabilityRadioelectronics and Communications Systems20122 иқтибос
ABI
Distribution of impurities in base-depleted region of diode temperature sensor
R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5
МақолаChalcogenide Semiconductor Thin FilmsLow Temperature Physics20242 иқтибос
ABI
Peculiarities of influence of radiation defects on photoconductivity of silicon irradiated by fast neutrons
M. Kаrimov, Sh. Makhkamov, Sh. A. Makhmudov +6
МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20101 иқтибос
ABI
Methods to decrease losses of energy generated by solar electrical modules
A. V. Karimov, D. M. Yodgorova, A. Z. Rakhmatov +1
МақолаPhotovoltaic System Optimization TechniquesApplied Solar Energy20110 иқтибос
ABI
Thermal model of the limiter diode
A. Z. Rakhmatov, O. A. Abdulkhaev, A. V. Karimov +1
МақолаPulsed Power Technology ApplicationsJournal of Engineering Physics and Thermophysics20120 иқтибос
ABI
Features of producing an ohmic contact to frontal surfaces of photoconversion structures
A. V. Karimov, D. M. Edgorova, A. Z. Rakhmatov +1
МақолаSemiconductor Quantum Structures and DevicesApplied Solar Energy20120 иқтибос
ABI
Effect of neutron irradiation on the structure of silicon p-n junctions of voltage limiters
A. Z. Rakhmatov
МақолаAdvancements in Semiconductor Devices and Circuit DesignSemiconductors20140 иқтибос
ABI
On mechanism of radiative sensitivity of power diode direct voltage drop
A. V. Karimov, A. Z. Rakhmatov, S. P. Skorniakov +3
МақолаSemiconductor materials and interfacesRadioelectronics and Communications Systems20170 иқтибос
ABI
Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment
A. V. Karimov, A. Z. Rakhmatov, O. A. Abdulkhaev +3
МақолаPulsed Power Technology ApplicationsTechnology and design in electronic equipment20180 иқтибос
ABI
A High Gain JFET Amplifier with Dynamic Load
Abdulaziz Karimov, B. M. Kamanov, D. M. Yodgorova +3
МақолаSemiconductor Lasers and Optical Devices2020 International Conference on Information Science and Communications Technologies (ICISCT)20200 иқтибос
ABI
The use of the past tensesin German and English
Yarash Ruziev, Samandar Khudoev, A. Z. Rakhmatov
МақолаLexicography and Language StudiesACADEMICIA An International Multidisciplinary Research Journal20210 иқтибос
ABI
The Effect of Atmospheric Oxide Thermodesorption on Negative-Ion Atomic and Cluster Sputtering of Silicon Single Crystal by Cesium Ions
Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2
МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 иқтибос
ABI
The effect of atmospheric oxide thermodesorption on negative-ion atomic and cluster sputtering of silicon single crystal by cesium ions
Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2
МақолаIon-surface interactions and analysisПоверхность Рентгеновские синхротронные и нейтронные исследования20240 иқтибос
ABI