Technology and design in electronic equipment

4 та иш

Журнал · ISSN 2225-5818

1. Highly sensitive photodetector based on ge double-barrier punch-through structure

   O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +1

   МақолаSemiconductor Quantum Structures and DevicesTechnology and design in electronic equipment20151 иқтибос

   ABIABI:AkademIndex/openalex/2015.article.000359

2. Carbon nanowalls in field emission cathodes

   А. F. Belyanin, В. В. Борисов, S. A. Daghetsyan +3

   МақолаCarbon Nanotubes in CompositesTechnology and design in electronic equipment20170 иқтибос

   ABIABI:AkademIndex/openalex/2017.article.000487

3. Electrophysical and photoelectric characteristics of a three-barrier photodiode GaAs structure

   O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2

   МақолаSemiconductor Quantum Structures and DevicesTechnology and design in electronic equipment20180 иқтибос

   ABIABI:AkademIndex/openalex/2018.article.000896

4. Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment

   A. V. Karimov, A. Z. Rakhmatov, O. A. Abdulkhaev +3

   МақолаPulsed Power Technology ApplicationsTechnology and design in electronic equipment20180 иқтибос

   ABIABI:AkademIndex/openalex/2018.article.000902