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D. M. Edgorova

7 та иш

Tashkent State Technical University, Tashkent, Republic of Uzbekistan

  1. Bilaterally Sensitive Photodiode Structures in the System Gallium Arsenide–Cadmium Sulfide

    Kutbiddin Ilovitddinovich Vakhobov, A. V. Karimov, Abdumalik Gaibov +2

    МақолаAdvanced Semiconductor Detectors and MaterialsJournal of Engineering Physics and Thermophysics20031 иқтибос
    ABI

  2. Influence of the thickness of the base region of structures with a Schottky barrier on their current and photoelectric characteristics

    D. M. Edgorova

    МақолаSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20071 иқтибос
    ABI

  3. Photophysical characteristics of microlayer photodiode pAlGaInAs(Zn)-nGaAs-Au structures

    D. M. Edgorova, F. M. Ashrapov

    МақолаSemiconductor Quantum Structures and DevicesJournal of Engineering Physics and Thermophysics20071 иқтибос
    ABI

  4. A method for determining the thermal EMF and thermal conductivity

    D. M. Edgorova, S. S. Dzhakhanov, A. V. Karimov +1

    МақолаElectric Power Systems and ControlInstruments and Experimental Techniques20060 иқтибос
    ABI

  5. Functional possibilities of Ag-N 0AlGaAs-n +GaAs-n 0GaInAs-au structures with an isotype base region

    A. V. Karimov, D. M. Edgorova, F. A. Giyasova +1

    МақолаSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20080 иқтибос
    ABI

  6. Photocurrent amplification effect of the fet gate p–n junction

    D. M. Edgorova

    МақолаPhotoreceptor and optogenetics researchJournal of Engineering Physics and Thermophysics20090 иқтибос
    ABI

  7. Features of producing an ohmic contact to frontal surfaces of photoconversion structures

    A. V. Karimov, D. M. Edgorova, A. Z. Rakhmatov +1

    МақолаSemiconductor Quantum Structures and DevicesApplied Solar Energy20120 иқтибос
    ABI