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Advancements in Semiconductor Devices and Circuit Design

147 та иш

  1. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    МақолаSemiconductor materials and devices20241 иқтибос
    ABI

  2. Electrodifusion of Manganese Atoms in Silicon

    Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20241 иқтибос
    ABI

  3. Theory of Electron Transport in Two-Barrier Five-Layer Semiconductor Structures

    Rustam Yavkachovich Rasulov, Voxob Rustamovich Rasulov, Makhliyo A. Mamatova +2

    МақолаSemiconductor Quantum Structures and DevicesEast European Journal of Physics20241 иқтибос
    ABI

  4. Mathematical Model for Thermo-Electrical Instabilities in Semiconductors

    Mukaddas Arzikulova

    МақолаThermal properties of materialsMathematical Modelling and Applications20241 иқтибос
    ABI

  5. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

    A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

    МақолаAdvancements in Semiconductor Devices and Circuit DesignSilicon20251 иқтибос
    ABI

  6. Energy Levels of Nanodots Inside Semiconductor Nanowires

    A. B. Davlatov, G. Gulyamov, Doston Urinboev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignBrazilian Journal of Physics20241 иқтибос
    ABI

  7. Nonlinear Properties of an Inhomogeneous Diode Structure in a Strong Microwave Field

    Sanobar Reymbaeva, G. Abdurakhmanov, Aleksandra Orel

    МақолаSemiconductor Quantum Structures and DevicesWorld Journal of Condensed Matter Physics20231 иқтибос
    ABI

  8. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

    A. É. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov +1

    Мақола2D Materials and ApplicationsApplied Sciences20231 иқтибос
    ABI

  9. Transient Processes in Semiconductor Diodes and Fundamentals of Recombination Theory

    Yurii R. Nosov

    БобSilicon and Solar Cell Technologies19690 иқтибос
    ABI

  10. Planar Diode with a Thin Base

    Yurii R. Nosov

    БобSemiconductor Quantum Structures and Devices19690 иқтибос
    ABI

  11. Differential Resistance and Diffusion Capacitance of Junctions in p-n-n+ Structures at high Injection Levels

    D. A. Aronov, Ya. P. Kotov

    БобSilicon and Solar Cell Technologies19710 иқтибос
    ABI

  12. Fluctuation levels in disordered systems (survey)

    I. M. Lifshit︠s︡, S. A. Gredeskul, L. А. Pastur

    МақолаQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics19760 иқтибос
    ABI

  13. Effect of nonuniformities and the measurement current on the current-voltage characteristics of tunnel junctions

    P. N. Chubov

    МақолаQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics19760 иқтибос
    ABI

  14. Self-blocking tunnel currents and current-voltage characteristics of S-I-S tunnel contacts

    V. P. Seminozhenko

    МақолаQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics19780 иқтибос
    ABI

  15. Bias current in semiconductors during overcharging of impurity centres

    B. B. Baizakov, R. A. Moominov, S. H. Shamirzaiev +1

    МақолаAdvancements in Semiconductor Devices and Circuit Designphysica status solidi (a)19810 иқтибос
    ABI

  16. Investigation of the band spectrum of semiconductors by means of a tunnel diode under pressure

    Z. M. Alekseeva, A. P. Vyatkin, А. П. Дмитриев

    МақолаAdvancements in Semiconductor Devices and Circuit DesignRussian Physics Journal19810 иқтибос
    ABI

  17. Behavior of excess currents in n-type gallium arsenide tunnel diodes

    A. P. Vyatkin, V. A. Glushchenko, R. P. Parkhomenko +1

    МақолаAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19810 иқтибос
    ABI

  18. On the diamagnetism of deep impurities in quantized semiconductor films

    E. Z. Imamov, В. Д. Кревчик

    МақолаAdvancements in Semiconductor Devices and Circuit Designphysica status solidi (b)19820 иқтибос
    ABI

  19. On the Noise of Semiconductor Diode Structures with Strong Carrier Accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    МақолаAdvancements in Semiconductor Devices and Circuit Designphysica status solidi (a)19820 иқтибос
    ABI

  20. Electron–phonon interaction-induced nonlinearity of the current–voltage characteristic of superconductor–normal-metal point contacts

    I. K. Yanson, Г. В. Камарчук, A. V. Khotkevich

    МақолаSemiconductor materials and devicesSoviet Journal of Low Temperature Physics19840 иқтибос
    ABI

  21. Study of quantum decays of metastable current states in rf SQUIDs

    I. M. Dmitrenko, V. A. Khlus, G. M. Tsoĭ +1

    МақолаSemiconductor Quantum Structures and DevicesSoviet Journal of Low Temperature Physics19850 иқтибос
    ABI

  22. Nonlinear conductivity in island bismuth films

    А. В. Бутенко, E. I. Bukhshtab, V. V. Pilipenko

    МақолаSemiconductor materials and devicesSoviet Journal of Low Temperature Physics19850 иқтибос
    ABI

  23. Two-dimensional charge layer at the boundary between two insulators

    Yu. Z. Kovdrya

    МақолаAdvancements in Semiconductor Devices and Circuit DesignSoviet Journal of Low Temperature Physics19850 иқтибос
    ABI

  24. Changes in the conducting properties of granular indium films in a metal–insulator transition

    Б. И. Белевцев, Yu. F. Komnik, А. В. Фомин

    МақолаQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics19860 иқтибос
    ABI

  25. Flux-quantization oscillations in normal metals and semiconductors in the localization regime

    I. O. Kulik

    МақолаQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics19870 иқтибос
    ABI