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Technical Physics Letters

356 та иш

Журнал · ISSN 1063-7850

  1. Photodeflection and photoacoustic microscopy of cracks and residual stresses induced by Vickers indentation in silicon nitride ceramic

    К. Л. Муратиков, A. L. Glazov, D. N. Rose +2

    МақолаThermography and Photoacoustic TechniquesTechnical Physics Letters19972 иқтибос
    ABI

  2. Photothermoelectric converters of concentrated radiation

    A. M. Kasymakhunova, M. B. Nabiev

    Мақолаsolar cell performance optimizationTechnical Physics Letters20032 иқтибос
    ABI

  3. Effect of ultrasonic treatment on the generation characteristics of a semiconductor-glass interface

    С. И. Власов, A. V. Ovsyannikov, B. N. Zaveryukhin

    МақолаEngineering Technology and MethodologiesTechnical Physics Letters20092 иқтибос
    ABI

  4. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

    M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

    МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20192 иқтибос
    ABI

  5. Manganese depth-concentration profiles in ion-implanted silicon studied by Rutherford backscattering

    Б. Э. Эгамбердиев, M. Yu. Adylov

    МақолаIon-surface interactions and analysisTechnical Physics Letters20012 иқтибос
    ABI

  6. Acoustostimulated expansion of the short-wavelength sensitivity range of AlGaAs/GaAs Solar cells

    E. B. Zaveryukhina, N. N. Zaveryukhina, L. N. Lezilova +3

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20052 иқтибос
    ABI

  7. Spectral and current-voltage characteristics of Si-Si1−xGex heterostructures grown by liquid phase epitaxy

    А. С. Саидов, А. Кутлимратов, Б. Сапаев +1

    МақолаSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20012 иқтибос
    ABI

  8. Magnetic field sensor based on compensated silicon

    М. К. Бахадырханов, Х. М. Илиев, K. S. Ayupov +1

    МақолаMagnetic Field Sensors TechniquesTechnical Physics Letters20032 иқтибос
    ABI

  9. Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers

    А. С. Саидов, A. Sh. Razzakov, D. V. Saparov

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20022 иқтибос
    ABI

  10. The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x(ZnSe)x

    А. С. Саидов, É. A. Koshchanov, A. Sh. Razzakov

    МақолаPhase-change materials and chalcogenidesTechnical Physics Letters19982 иқтибос
    ABI

  11. The effect of γ radiation on the properties of p-n-p structures based on polycrystalline cadmium telluride

    Zh. Zhanabergenov, Ш. А. Мирсагатов, Smagul Karazhanov +1

    МақолаAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters20032 иқтибос
    ABI

  12. Anomalies of Frequency Cutoff of Semiconductor Diodes at Microwave

    G. Abdurakhmanov, Amugul Esbergenova, C. Reyimbaeva

    МақолаAdvanced Research in Systems and Signal ProcessingTechnical Physics Letters20212 иқтибос
    ABI

  13. The effect of electron beam fusion on the structure and properties of plasma jet sprayed nickel alloy coatings

    A. D. Pogrebnyak, V. V. Vasilyuk, Darya Alontseva +3

    МақолаLaser-induced spectroscopy and plasmaTechnical Physics Letters20042 иқтибос
    ABI

  14. Liquid phase epitaxy of (GaAs)1−x(ZnSe)x solid solution layers from a lead-based solution melt

    А. С. Саидов, A. Sh. Razzakov, Kurban Gaimnazarov

    МақолаChalcogenide Semiconductor Thin FilmsTechnical Physics Letters20012 иқтибос
    ABI

  15. The role of the fano resonance in multiple exciton generation in quantum dots

    Б. Л. Оксенгендлер, M. B. Marasulov, В.Н. Никифоров

    МақолаPlasmonic and Surface Plasmon ResearchTechnical Physics Letters20162 иқтибос
    ABI

  16. Generation of Charge Carriers in Uniformly Heated Si–Ge Films Heavily Doped with Titanium

    Ш.К. Кучканов, Х. Б. Ашуров

    МақолаGlass properties and applicationsTechnical Physics Letters20182 иқтибос
    ABI

  17. Liquid phase epitaxy of Ge1−xSnx semiconductor films

    А. С. Саидов, A. Sh. Razzakov, É. A. Koshchanov

    МақолаPhotonic and Optical DevicesTechnical Physics Letters20012 иқтибос
    ABI

  18. An Infrared Radiation Photoresistor Based on Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, Sh. N. Ibodullaev, Н. Ф. Зикриллаев +1

    МақолаSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20212 иқтибос
    ABI

  19. Coupled vertical microcavities

    M. A. Kaliteevskiĭ

    МақолаStrong Light-Matter InteractionsTechnical Physics Letters19971 иқтибос
    ABI

  20. Thick-layer glycerin-containing bichromated gelatin for recording volume holograms

    Yu. N. Denisyuk, N. M. Ganzherli, I. Maurer +1

    МақолаPhotorefractive and Nonlinear OpticsTechnical Physics Letters19971 иқтибос
    ABI

  21. Kinetics of dislocation ensembles in deformable irradiated materials

    Н. В. Камышанченко, В. В. Красильников, I. M. Neklyudov +1

    МақолаFusion materials and technologiesTechnical Physics Letters19971 иқтибос
    ABI

  22. Laser multipass probing in Thomson plasma diagnostics

    M. Yu. Kantor, D. V. Kuprienko

    МақолаLaser-induced spectroscopy and plasmaTechnical Physics Letters19971 иқтибос
    ABI

  23. Carrier transport in a diode base with locally nonuniform recombination properties

    А. В. Иванов, N. B. Strokan, V. B. Shuman

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters19971 иқтибос
    ABI

  24. New semiconductor devices based on a special metal-insulator-semiconductor structure for measuring the energy (dose) of electromagnetic and nuclear radiation

    P. G. Kasherininov, А. N. Lodygin

    МақолаAdvanced Research in Systems and Signal ProcessingTechnical Physics Letters19971 иқтибос
    ABI

  25. Influence of uniaxial compression on the photoconductivity of highly compensated Si〈B, Mn〉

    М. К. Бахадырханов, Х. М. Илиев, Kh. F. Zikrillaev

    МақолаSemiconductor materials and interfacesTechnical Physics Letters19981 иқтибос
    ABI