Liquid phase epitaxy of (GaAs)1−x(ZnSe)x solid solution layers from a lead-based solution melt
А. С. СаидовPhysical Engineering Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanA. Sh. RazzakovPhysical Engineering Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanKurban GaimnazarovPhysical Engineering Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
Epitaxial layers of (GaAs)1−x (ZnSe)x solid solutions were grown from a tin-based solution melt confined between GaAs substrates. The solid solution layers were characterized with respect to composition, homogeneity, and some physical characteristics.
Ҳали таржима қилинмаган
Мавзулар
Идентификаторлар
Иқтибослар ва манбалар
2 та иқтибос0 та фойдаланилган манба