Anomalies of Frequency Cutoff of Semiconductor Diodes at Microwave
G. AbdurakhmanovNational University of Uzbekistan, 100174, Tashkent, UzbekistanAmugul EsbergenovaScientific and Engineering Center of JSC Uzbekenergo, 100025, Tashkent, UzbekistanC. ReyimbaevaNational University of Uzbekistan, 100174, Tashkent, Uzbekistan
ABI
Аннотация
The results of an experimental study of the frequency dependence of the detected voltage of semiconductor diodes for various destinations (microwave detectors, parametric amplifier, low-frequency rectifier) are presented. It was found that the diodes with a cutoff frequency less than 100 MHz exhibit detector properties at 10 GHz.
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