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Technical Physics Letters

356 та иш

Журнал · ISSN 1063-7850

  1. Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions

    K. D. Moiseev, B. Ya. Meltser, В. А. Соловьев +4

    МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19981 иқтибос
    ABI

  2. Investigation of the influence of residual stresses on the thermophysical and thermoelastic properties of silicon nitride ceramic by photothermal and photoacoustic methods

    К. Л. Муратиков, A. L. Glazov, D. N. Rose +1

    МақолаThermography and Photoacoustic TechniquesTechnical Physics Letters19981 иқтибос
    ABI

  3. Determination of fluctuations of the electron temperature and density in an ionizationunstable inert-gas plasma in a magnetogasdynamic channel

    T. A. Lapushkina, E. A. D’yakonova, R. V. Vasil’eva

    МақолаPlasma Diagnostics and ApplicationsTechnical Physics Letters19981 иқтибос
    ABI

  4. Thermoelectric converter

    A. V. Karimov, Sh. N. Bakhronov

    МақолаAdvanced Thermoelectric Materials and DevicesTechnical Physics Letters19991 иқтибос
    ABI

  5. Silicon single crystals ion-doped with ytterbium

    D. É. Nazyrov, Semyon Goncharov, А. В. Суворов

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20001 иқтибос
    ABI

  6. Nonselective polycrystalline radiation detectors based on higher manganese silicides

    T. S. Kamilov, A. Zh. Khusanov, М. К. Бахадырханов +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20021 иқтибос
    ABI

  7. Alternating-strain-induced drift of nonequilibrium charge carriers in GaAs photodetectors

    B. N. Zaveryukhin, N. N. Zaveryukhina, Р. А. Муминов +1

    МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters20021 иқтибос
    ABI

  8. Synthesis and study of a perovskite phase of yttrium barium metal oxide ceramics

    M. U. Kalanov, Э. М. Ибрагимова

    МақолаAdvancements in Solid Oxide Fuel CellsTechnical Physics Letters20021 иқтибос
    ABI

  9. Silicon carbide materials obtained from rice husk

    G. T. Adylov, Sh. A. Faiziev, M. S. Paizullakhanov +2

    МақолаAdvanced ceramic materials synthesisTechnical Physics Letters20031 иқтибос
    ABI

  10. Tensoresistive effects in tin-doped silicon under static and dynamic pressure conditions

    О. О. Маматкаримов, Р. Х. Хамидов

    МақолаForce Microscopy Techniques and ApplicationsTechnical Physics Letters20031 иқтибос
    ABI

  11. Calcium carbide synthesis using a solar furnace

    M. S. Paizullakhanov, Sh. A. Faiziev

    МақолаPetroleum Processing and AnalysisTechnical Physics Letters20061 иқтибос
    ABI

  12. Acoustostimulated change in the optical absorption coefficient of gallium arsenide in the 0.81–1.77 μm wavelength range

    N. N. Zaveryukhina, E. B. Zaveryukhina, B. N. Zaveryukhin

    МақолаThermography and Photoacoustic TechniquesTechnical Physics Letters20071 иқтибос
    ABI

  13. Acoustostimulated changes in the density of surface states and their energy spectrum in p-type silicon single crystals

    N. N. Zaveryukhina, E. B. Zaveryukhina, С. И. Власов +1

    МақолаIndustrial Engineering and TechnologiesTechnical Physics Letters20081 иқтибос
    ABI

  14. Growth and properties of single crystals of Si1 − x Ge x (0 < x < 0.35) solid solutions

    I. G. Atabaev, N. A. Matchanov, M. U. Khazhiev +1

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20101 иқтибос
    ABI

  15. Stoichiometry, phase composition, and properties of superhard nanostructured Ti-Hf-Si-N coatings obtained by deposition from high-frequency vacuum-arc discharge

    A. D. Pogrebnyak, A. P. Shpak, В. М. Береснев +7

    МақолаMetal and Thin Film MechanicsTechnical Physics Letters20111 иқтибос
    ABI

  16. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

    А. С. Саидов, A. Yu. Leĭderman, Sh. N. Usmonov +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20201 иқтибос
    ABI

  17. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

    A.E. Abdikarimov

    МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20201 иқтибос
    ABI

  18. Application of ion implantation for synthesis of copper nanoparticles in a zinc oxide matrix for obtaining new nonlinear optical materials

    А. Л. Степанов, Р. И. Хайбуллин, N. Can +4

    МақолаNonlinear Optical Materials StudiesTechnical Physics Letters20041 иқтибос
    ABI

  19. Creation and electrical properties of p-Cu2ZnSnS4/n-Si heterojunctions

    А. Yusupov, К. Адамбаев, Zafar Turaev +2

    МақолаChalcogenide Semiconductor Thin FilmsTechnical Physics Letters20171 иқтибос
    ABI

  20. Mechanisms for thermal stability of the electrophysical properties of overcompensated n-Si〈B, S〉

    Marat S. Yunusov, M. Kаrimov, P. A. Khalikov

    МақолаSemiconductor materials and interfacesTechnical Physics Letters19991 иқтибос
    ABI

  21. Investigation of the growth and properties of epitaxial layers of Si1−xSnx solid solutions

    Б. Сапаев, А. С. Саидов

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20031 иқтибос
    ABI

  22. The synthesis and properties of epitaxial layers of (Si2)1−x(GaAs)x solid solutions on silicon substrates

    Б. Сапаев, А. С. Саидов, B. N. Zaveryukhin

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20041 иқтибос
    ABI

  23. Synthesis and properties of Ge-(Ge2)1−x(GaAs)x (0≤x≤1.0) epitaxial heterostructures grown by LPE from lead-based solution melts

    Б. Сапаев

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20041 иқтибос
    ABI

  24. Single crystals of TlIn1 – x Co x Se2 (0 ≤ x ≤ 0.5) solid solutions as effective materials for semiconductor tensometry

    S. Kh. Umarov, И. Нуритдинов, Zh. Dzh. Ashurov +1

    МақолаSolid-state spectroscopy and crystallographyTechnical Physics Letters20171 иқтибос
    ABI

  25. Infralow-frequency oscillations in photoconductivity of chromium-doped silicon

    Kh. Kh. Dzhuliev, A. Yu. Leĭderman, A. T. Mamadalimov

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20031 иқтибос
    ABI