Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures
A.S. SaidovPhysical Technical Institute, Scientific Research Organization Physics of the Sun, Academy of Sciences of the Republic of Uzbekistan, 100084, Tashkent, UzbekistanA. Yu. LeĭdermanPhysical Technical Institute, Scientific Research Organization Physics of the Sun, Academy of Sciences of the Republic of Uzbekistan, 100084, Tashkent, UzbekistanSh. N. UsmonovChirchiq State Pedagogical University, 111700, Chirchiq, Tashkent region, UzbekistanU. P. AsatovaUrgench State University, 220100, Urgench, Uzbekistan
ABI
Аннотация
The current–voltage (I–V) characteristics of n-GaP–p-(InSb)1 – x(Sn2)x (0 ≤ x ≤ 0.05) heterostructures have been studied. At low voltages (V < 0.5 V), the I–V curve is described by the exponential law I = I0exp(qV/ckT), while at higher voltages (from 0.5 to 1.8 V) it obeys the power law I = AVm with various values of coefficient A and exponent m dependent on the voltage. At still higher voltages (from 2.10 to 2.48 V), the characteristic exhibits a sublinear behavior described by the equation V = V0exp(Jd/2kTμpNt).
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