Р. Х. Хамидов

6 та иш

Ulugbek Tashkent State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, Uzbekistan

1. Advanced Universal Hydrostatic Pressure Device with Pneumatic Amplifier for the Investigation of the Electrical and Thermal Properties of Semiconductors under Hydrostatic Pressure

   Р. Х. Хамидов, О. О. Маматкаримов

   МақолаHigh-pressure geophysics and materialsInstruments and Experimental Techniques202211 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.000422

2. Wave processes in silicon samples with nickel impurities arising at pulsed hydrostatic pressure

   Р. Х. Хамидов, О. О. Маматкаримов

   МақолаElectromagnetic Effects on MaterialsSemiconductor Science and Technology20213 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.250850

3. Dynamic strain-sensitive characteristics of the Schottky-barrier diodes under a pulsed uniform pressure

   О. О. Маматкаримов, С. З. Зайнабидинов, Azizbek Abduraimov +2

   МақолаElectromagnetic Launch and Propulsion TechnologySemiconductors20002 иқтибос

   ABIABI:AkademIndex/openalex/2000.article.000081

4. Tensoresistive effects in tin-doped silicon under static and dynamic pressure conditions

   О. О. Маматкаримов, Р. Х. Хамидов

   МақолаForce Microscopy Techniques and ApplicationsTechnical Physics Letters20031 иқтибос

   ABIABI:AkademIndex/openalex/2003.article.000115

5. The relative current change, concentration, and carrier mobility in silicon samples doped nickel and at pulse hydrostatic pressure

   О. О. Маматкаримов, Р. Х. Хамидов, A. A. Abdukarimov

   МақолаElectromagnetic Effects on MaterialsMaterials Today Proceedings20191 иқтибос

   ABIABI:AkademIndex/openalex/2019.article.000617

6. Electric voltage redistribution effect in Schottky barrier structures based on Si<P,Ni> under hydrostatic pressure

   Р. Х. Хамидов, О. О. Маматкаримов

   МақолаSemiconductor materials and interfacesJournal of Physics Conference Series20220 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.009197