Dynamic strain-sensitive characteristics of the Schottky-barrier diodes under a pulsed uniform pressure
О. О. МаматкаримовUlugbek Tashkent State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, UzbekistanС. З. ЗайнабидиновUlugbek Tashkent State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, UzbekistanAzizbek AbduraimovUlugbek Tashkent State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, UzbekistanР. Х. ХамидовUlugbek Tashkent State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, UzbekistanU. A. TuichievUlugbek Tashkent State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, Uzbekistan
ABI
Аннотация
Dynamic strain-gage characteristics of Schottky-barrier diodes of the Au-Si:Ni-Sb type subjected to pulsed uniform pressure in the range of P=(0−5)×108 Pa at a temperature of T=300 K were studied. Studies of I-V characteristics of the diodes showed that, due to an additional temperature effect induced by the pulsed pressure, the dynamic parameters of the stress-sensitivity effect in these diodes were 20–30% larger than the corresponding static parameters.
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