Generation of Charge Carriers in Uniformly Heated Si–Ge Films Heavily Doped with Titanium
Ш.К. КучкановArifov Institute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, 100125, UzbekistanХ. Б. АшуровArifov Institute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, 100125, Uzbekistan
ABI
Аннотация
We have studied the generation of charge carriers and development of the electromotive force (emf) in uniformly heated n-type Si–Ge films heavily doped with titanium obtained by chemical-vapor deposition on p-type silicon substrates. A maximum emf value of ∼3 mV was observed at temperatures within 500–600 K for dark short-circuit currents ∼0.5–1 μA, the value of which increased with the temperature to reach ∼3 μA at 800 K.
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