The thermovoltaic effect in variband solid solution Si1–x Ge x (0 ≤ x ≤ 1)
А. С. СаидовPhysicotechnical Institute, Solar Physics Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 700084, UzbekistanA. Yu. LeydermanPhysicotechnical Institute, Solar Physics Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 700084, UzbekistanA. B. KarshievPhysicotechnical Institute, Solar Physics Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 700084, Uzbekistan
ABI
Аннотация
The thermovoltaic effect in films of variband solid solution Si1–x Ge x (0 ≤ x ≤ 1) has been observed for the first time. The samples comprised n-Si–p-Si1–x Ge x (0 ≤ x ≤ 1) heterostructures grown by liquid phase epitaxy. An electromotive force within 0.05–0.3 mV and a current of 0.0025–0.0035 μA appeared on heating samples in a temperature range from 40 to 250°C.
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