Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x(ZnSe)x

1. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

   Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

   МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.001403

2. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

   С. З. Зайнабидинов, А. С. Саидов, M. U. Kalanov +1

   МақолаSemiconductor materials and interfacesApplied Solar Energy20192 иқтибос

   ABIABI:AkademIndex/openalex/2019.article.000285