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А. С. Саидов

101 та иш

Institute of Nuclear Physics, U.Gulomov Street, Pos Ulugbek, Tashkent 100214 (Uzbekistan)

  1. Studying of Influence of a Neutron Irradiation on Element Contents and Structures of Aluminum Alloys SAV-1 and AMG-2

    У. С. Салихбаев, S.A. Baytelesov, F. R. Kungurov +1

    МақолаMaterial Properties and Failure Mechanisms20110 иқтибос
    ABI

  2. Temperature-induced properties of industrial silicon produced by repeated remelting in a solar furnace

    А. С. Саидов, A. Yu. Leĭderman, Kh. M. Suleimanov +1

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20120 иқтибос
    ABI

  3. Electrical and physical properties of structures with p-n transition produced from silicon obtained by fivefold meltdown of metallurgical silicon in a solar oven

    А. С. Саидов, A. Yu. Leĭderman, Sh. T. Manshurov +2

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20130 иқтибос
    ABI

  4. Electrophysical and optical properties of silicon produced by multiple remelting of metallurgical silicon by concentrated solar beams (Review)

    А. С. Саидов, A. Yu. Leĭderman

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20150 иқтибос
    ABI

  5. Spectral Photosensitivity and Temperature-Independent Volt–Ampere Characteristic of pSi–n(ZnSe)1 –x–y(Si2)x(GaP)y Structures

    А. С. Саидов, U. Kh. Rakhmonov, A. Yu. Leĭderman

    МақолаSemiconductor materials and interfacesApplied Solar Energy20180 иқтибос
    ABI

  6. Эффект инжекционного обеднения в p-Si-n-(Si-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(ZnSe)-=SUB=-x-=/SUB=- (0≤ x≤0.01) гетероструктуре

    А. С. Саидов, А.Ю. Лейдерман, Sh. N. Usmonov +1

    МақолаSilicon Nanostructures and PhotoluminescenceФизика и техника полупроводников20180 иқтибос
    ABI

  7. Photothermovoltaic Effect in a SixGe1–x Variband Solid Solution

    А. С. Саидов, A. Yu. Leĭderman, A. B. Karshiev

    МақолаMaterial Science and ThermodynamicsApplied Solar Energy20190 иқтибос
    ABI

  8. Semiconductor solid solutions Ge<sub>1-x</sub> Sn<sub>x</sub> as a new material for electronics

    А. С. Саидов, Sh.K. Ismailov, UP. Asatova

    МақолаPhotonic and Optical Devices2021 International Conference on Information Science and Communications Technologies (ICISCT)20210 иқтибос
    ABI

  9. Influence of the varizonal Si<sub>1-x</sub>Ge<sub>x</sub> solid solution composition on the thermovoltaic effect in n – Si – p – Si<sub>(1-x)</sub>Ge<sub>x</sub> structure

    А. С. Саидов, Sh. N. Usmonov, A B Karshiev +1

    МақолаSilicon Nanostructures and PhotoluminescenceIOP Conference Series Earth and Environmental Science20220 иқтибос
    ABI

  10. Diamond films obtained on silicone substrates by the CVD method and properties of structures based on them

    А. С. Саидов, Sh. N. Usmonov, U. Kh. Rakhmonov

    МақолаDiamond and Carbon-based Materials ResearchPhysical Sciences and Technology20230 иқтибос
    ABI

  11. Formation and Properties of ITO Films Produced on Silicon for Applications in Solar Cells

    А. С. Саидов, А. Кутлимратов, R. R. Kabulov +3

    МақолаZnO doping and properties20230 иқтибос
    ABI

  12. Investigation of the Features of the Thermovoltaic Effect in GaSb, GaAs and GaP Binary Compounds

    А. С. Саидов, Sh. N. Usmonov, O. Z. Turgunov

    МақолаSemiconductor materials and interfacesApplied Solar Energy20230 иқтибос
    ABI

  13. Сарлавҳасиз

    А. С. Саидов, Inson Huquqlari, Yuridik Fanlar Doktori Markazining Direktori +78

    БошқаReview of Law Sciences20230 иқтибос
    ABI

  14. Сарлавҳасиз

    B Xodjayev, А. С. Саидов, Inson Huquqlari +88

    БошқаReview of Law Sciences20230 иқтибос
    ABI

  15. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

    D. V. Saparov, А. С. Саидов, Sh. N. Usmonov +3

    ПрепринтGaN-based semiconductor devices and materialsResearch Square20230 иқтибос
    ABI

  16. Thermally Stimulated Transformation of Oxygen Atoms between Phase States in a Silicon Single Crystal

    M. U. Kalanov, I. I. Sadikov, A. V. Khugaev +4

    ПрепринтSilicon Nanostructures and PhotoluminescenceResearch Square20230 иқтибос
    ABI

  17. Structural Features of the Epitaxial Layer of the (GaAs)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(Ge&lt;sub&gt;2&lt;/sub&gt;)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Solid Solution Grown from a Bismuth Solution Melt

    А. С. Саидов, M. U. Kalanov, D. V. Saparov +4

    МақолаSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20240 иқтибос
    ABI

  18. Regarding Spectrum Photosensitivity and Certain GaAs’s Structural Properties Heterostructures, Namely (GaAs)<sub>1-x-y</sub>(Ge2)<sub>x</sub>(ZnSe)<sub>y</sub>

    Shavkat Ismailov, D. V. Saparov, А. С. Саидов +2

    МақолаPhase-change materials and chalcogenides20240 иқтибос
    ABI

  19. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

    А. С. Саидов, Shukrullo Usmonov, D. V. Saparov +4

    МақолаGaN-based semiconductor devices and materialsAIP conference proceedings20240 иқтибос
    ABI

  20. ITO Films Deposited on Silicon by CVD Method

    R. R. Kabulov, А. Кутлимратов, А. С. Саидов +2

    МақолаZnO doping and propertiesSurface Engineering and Applied Electrochemistry20250 иқтибос
    ABI

  21. Radiation-Stimulated Transformation of Cxygen Atoms Between Impurity Phase States of A Growing Silicon Single Crystal

    M. U. Kalanov, I. I. Sadikov, Sh. R. Malikov +5

    МақолаSilicon and Solar Cell TechnologiesSilicon20250 иқтибос
    ABI

  22. STUDYING THE GROWTH MECHANISMS OF Si EPITAXIAL LAYERS FROM A LIMITED VOLUME OF Si-Sn SOLUTION USING THEORETICAL CALCULATIONS AND THE SEDIMENTATION METHOD

    A. Sh. Razzokov, Khushnudbek Eshchanov, А. С. Саидов

    МақолаAnodic Oxide Films and NanostructuresInternational Journal of Mathematics and Physics20250 иқтибос
    ABI

  23. To the Development of Comparative Legal History (Review: Reflections after Reading D. Yu. Poldnikov's Two-Volume Textbook «Comparative History of Foreign Law» (Moscow, 2024))

    А. С. Саидов

    МақолаLaw, logistics, and international tradeLex Russica20250 иқтибос
    ABI

  24. Growing Perfect Single-Crystal Epitaxial Films of (Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1-x&lt;/sub&gt;(GaN)&lt;sub&gt;x&lt;/sub&gt; Solid Solutions on Si (111) Substrates from the Liquid Phase

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +5

    МақолаGaN-based semiconductor devices and materialsActa Physica Polonica A20250 иқтибос
    ABI

  25. Morphology and Electrical Properties of ITO Films Obtained on Silicon Substrates by CVD Method

    А. С. Саидов, Sh.N. Usmonov, M. U. Hajiev +9

    МақолаZnO doping and propertiesEast European Journal of Physics20250 иқтибос
    ABI