Electrical and physical properties of structures with p-n transition produced from silicon obtained by fivefold meltdown of metallurgical silicon in a solar oven

The results of studying electrical and physical properties of n-p structures produced from silicon obtained by fivefold open-air meltdown of metallurgical silicon of KR3 silicon in a solar oven are presented. It is shown that the current and voltage generated during the heating of structures with plain ohmic contacts start to fall at around 120°C, while in structures with n-p transition these characteristics continue to increase at up to 250°C. It has been discovered that structures with n-p transition display rectifying properties in a temperature range of 30–150°C.

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