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A. Sh. Razzokov

13 та иш

Urgench State University, Urgench, Uzbekistan

  1. Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

    А. С. Саидов, A. Sh. Razzokov

    МақолаSemiconductor materials and interfacesCrystallography Reports20225 иқтибос
    ABI

  2. Obtaining Si-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub>-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub> Structures from a Tin Solution-Melt in a Single Technological Cycle

    А. С. Саидов, A. Sh. Razzokov, С.И. Петрушенко +1

    МақолаSemiconductor materials and interfacesActa Physica Polonica A20222 иқтибос
    ABI

  3. Features of growing Si- and Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>-single-crystal films from solution-melt based on tin

    A. Sh. Razzokov, А. С. Саидов, V. V. Gіrzhon +1

    МақолаSilicon Nanostructures and PhotoluminescenceJournal of Physical Studies20222 иқтибос
    ABI

  4. Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

    A. Sh. Razzokov, А. С. Саидов, B. Allabergenov +3

    МақолаChalcogenide Semiconductor Thin FilmsJournal of Crystal Growth20232 иқтибос
    ABI

  5. Optimal Regime for Growth of Epitaxial Germanium Layers from the Liquid Phase Based on Thermodynamic Calculations

    A. Sh. Razzokov, Khushnudbek Eshchanov

    МақолаPhotonic and Optical DevicesInternational Journal of Thermodynamics20221 иқтибос
    ABI

  6. THERMODYNAMIC BASES OF OBTAINING CRYSTALLINE PERFECT SILICON FROM SOLUTION-MELT

    Khushnudbek Eshchanov, A. Sh. Razzokov

    МақолаSolidification and crystal growth phenomena20210 иқтибос
    ABI

  7. Thermodynamic Bases for Obtaining Crystalline Perfect Silicon from Tin-silicon Solution

    A. Sh. Razzokov, Khushnudbek Eshchanov

    МақолаHermeneutics and Narrative IdentityDergiPark (Istanbul University)20210 иқтибос
    ABI

  8. Growth of Epitaxial Layers of the Si&lt;sub&gt;1-x-y&lt;/sub&gt;Ge&lt;sub&gt;x&lt;/sub&gt;Sn&lt;sub&gt;y&lt;/sub&gt; Solid Solution from a Tin Solution-Melt

    A. Sh. Razzokov

    МақолаPhotonic and Optical DevicesSiberian Journal of Physics20230 иқтибос
    ABI

  9. Theoretical Evaluation of Silicon Crystal Growth Using Gallium Solvent

    A. Sh. Razzokov, Khushnudbek Eshchanov

    МақолаSilicon and Solar Cell TechnologiesProceedings of Pakistan Academy of Sciences A Physical and Computational Sciences20240 иқтибос
    ABI

  10. STUDYING THE GROWTH MECHANISMS OF Si EPITAXIAL LAYERS FROM A LIMITED VOLUME OF Si-Sn SOLUTION USING THEORETICAL CALCULATIONS AND THE SEDIMENTATION METHOD

    A. Sh. Razzokov, Khushnudbek Eshchanov, А. С. Саидов

    МақолаAnodic Oxide Films and NanostructuresInternational Journal of Mathematics and Physics20250 иқтибос
    ABI

  11. Growing Perfect Single-Crystal Epitaxial Films of (Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1-x&lt;/sub&gt;(GaN)&lt;sub&gt;x&lt;/sub&gt; Solid Solutions on Si (111) Substrates from the Liquid Phase

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +5

    МақолаGaN-based semiconductor devices and materialsActa Physica Polonica A20250 иқтибос
    ABI

  12. Formation of (Si2)1-x(GaP)x gradient composition solid solutions during growth from a tin solution-melt

    A. Sh. Razzokov, V. V. Gіrzhon, I. Shtablavyi

    МақолаSilicon Nanostructures and PhotoluminescenceVacuum20250 иқтибос
    ABI

  13. Preparation and Structure of Solid Solutions (Ge2)1−x–y(GaAs)x(ZnSe)y

    A. Sh. Razzokov, V. V. Girzhon, D. E. Koshchanova

    БобSemiconductor materials and interfacesAdvances in Science, Technology & Innovation/Advances in science, technology & innovation20250 иқтибос
    ABI