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А. С. Саидов

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Physicotechnical Institute of the Academy of Sciences of the Republic of Uzbekistan

  1. Active solar energy material science thermoelectric properties of nGe-p(InSb)1 − x (Sn2) x heterostructures

    А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

    МақолаAdvanced Thermoelectric Materials and DevicesApplied Solar Energy20103 иқтибос
    ABI

  2. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

    А. С. Саидов, Sh. N. Usmonov, М. С. Саидов

    МақолаSilicon Nanostructures and PhotoluminescenceSemiconductors20153 иқтибос
    ABI

  3. The synthesis and photoelectric properties of Si-(Si2)1−x(ZnS)x epitaxial structures

    Б. Сапаев, А. С. Саидов

    МақолаSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20043 иқтибос
    ABI

  4. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20073 иқтибос
    ABI

  5. Structure and photoelectric properties of Si1 − x Sn x epilayers

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20103 иқтибос
    ABI

  6. Thermovoltaic processes in gallium arsenide doped with tin

    A. Yu. Leĭderman, А. С. Саидов, M. M. Hashaev +1

    МақолаChalcogenide Semiconductor Thin FilmsApplied Solar Energy20123 иқтибос
    ABI

  7. Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20073 иқтибос
    ABI

  8. Thermovoltaic effect of pSi-n(Si2)1−x(ZnS)x structures

    М. С. Саидов, А. С. Саидов, Sh. N. Usmonov +1

    МақолаSemiconductor materials and interfacesApplied Solar Energy20092 иқтибос
    ABI

  9. Features of polycrystalline silicon fabricated by fivefold remelting in a solar furnace

    А. С. Саидов, A. Yu. Leyderman, Sh. T. Manshurov

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20102 иқтибос
    ABI

  10. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

    С. З. Зайнабидинов, А. С. Саидов, M. U. Kalanov +1

    МақолаSemiconductor materials and interfacesApplied Solar Energy20192 иқтибос
    ABI

  11. Growing the solid solution of molekular substitution (GaAs)<sub>1-z</sub>(ZnSe)<sub>z</sub>

    А. С. Саидов, D. V. Saparov, Shukrullo Usmonov +2

    МақолаChalcogenide Semiconductor Thin FilmsIOP Conference Series Materials Science and Engineering20212 иқтибос
    ABI

  12. Obtaining Si-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub>-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub> Structures from a Tin Solution-Melt in a Single Technological Cycle

    А. С. Саидов, A. Sh. Razzokov, С.И. Петрушенко +1

    МақолаSemiconductor materials and interfacesActa Physica Polonica A20222 иқтибос
    ABI

  13. Features of growing Si- and Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>-single-crystal films from solution-melt based on tin

    A. Sh. Razzokov, А. С. Саидов, V. V. Gіrzhon +1

    МақолаSilicon Nanostructures and PhotoluminescenceJournal of Physical Studies20222 иқтибос
    ABI

  14. Structure, Morphology and Photoelectric Properties of n-GaAs--p-(GaAs)1--x(Ge2)х Heterostructure

    S.Z. Zaynabidinov, А. С. Саидов, Akramjon Y. Boboev +1

    МақолаSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences20222 иқтибос
    ABI

  15. Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

    A. Sh. Razzokov, А. С. Саидов, B. Allabergenov +3

    МақолаChalcogenide Semiconductor Thin FilmsJournal of Crystal Growth20232 иқтибос
    ABI

  16. Spectral and current-voltage characteristics of Si-Si1−xGex heterostructures grown by liquid phase epitaxy

    А. С. Саидов, А. Кутлимратов, Б. Сапаев +1

    МақолаSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20012 иқтибос
    ABI

  17. Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers

    А. С. Саидов, A. Sh. Razzakov, D. V. Saparov

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20022 иқтибос
    ABI

  18. The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x(ZnSe)x

    А. С. Саидов, É. A. Koshchanov, A. Sh. Razzakov

    МақолаPhase-change materials and chalcogenidesTechnical Physics Letters19982 иқтибос
    ABI

  19. Heat-voltaic effect of pSi-n(ZnSe)1 − x − y (Si2) x (GaP) y structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    МақолаSemiconductor materials and interfacesApplied Solar Energy20102 иқтибос
    ABI

  20. Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions

    А. С. Саидов, Sh. N. Usmonov, D. V. Saparov +1

    МақолаSilicon Nanostructures and PhotoluminescenceApplied Solar Energy20202 иқтибос
    ABI

  21. Preparation and Morphological Studies of Epitaxial Layers of a Solid Solution Si1–xGex

    А. С. Саидов, Alozhon Sh. Razzokov

    МақолаSilicon Nanostructures and PhotoluminescenceSiberian Journal of Physics20202 иқтибос
    ABI

  22. Liquid phase epitaxy of (GaAs)1−x(ZnSe)x solid solution layers from a lead-based solution melt

    А. С. Саидов, A. Sh. Razzakov, Kurban Gaimnazarov

    МақолаChalcogenide Semiconductor Thin FilmsTechnical Physics Letters20012 иқтибос
    ABI

  23. Spectral Photosensitivity ofpSi—n(ZnSe)1 −x−y (Si2) x (GaP) y Structures

    А. С. Саидов, Sh. N. Usmonov, U. Kh. Rakhmonov

    МақолаChalcogenide Semiconductor Thin FilmsApplied Solar Energy20102 иқтибос
    ABI

  24. Thermoelectric effect in the graded band gap Si1–x Ge x (0.2 ≤ x ≤ 1), Si1–x Ge x (0.5 ≤ x ≤ 1) solid solutions dependent on the gap difference

    A. Yu. Leĭderman, А. С. Саидов, A. B. Karshiev

    МақолаMaterial Science and ThermodynamicsApplied Solar Energy20172 иқтибос
    ABI

  25. Liquid phase epitaxy of Ge1−xSnx semiconductor films

    А. С. Саидов, A. Sh. Razzakov, É. A. Koshchanov

    МақолаPhotonic and Optical DevicesTechnical Physics Letters20012 иқтибос
    ABI