Correlation between the material parameters and conditions for the excitation of recombination waves in Si〈;S〉
М. К. БахадырхановTashkent State Technical University, 700095, Tashkent, UzbekistanU. Kh. KurbanovaTashkent State Technical University, 700095, Tashkent, UzbekistanН. Ф. ЗикриллаевTashkent State Technical University, 700095, Tashkent, Uzbekistan
ABI
Аннотация
The conditions for the self-excitation of current oscillations in the form of recombination waves in sulfur-doped silicon are investigated as a function of the electrical parameters of Si〈S〉 samples. The data reveal regular and reproducible self-excited oscillations with controllable parameters. A distinct correlation is established between the resistivities and the type of conductivity of the Si〈S〉 samples, and the parameters for the excitation of recombination waves are determined, specifically, the excitation electric field and temperature.
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