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Semiconductors

118 та иш

Журнал · ISSN 1063-7826

  1. Epitaxial deposition of InGaAsP solid solutions in the miscibility gap

    L. S. Vavilova, V. A. Kapitonov, A. V. Murashova +1

    МақолаChalcogenide Semiconductor Thin FilmsSemiconductors20000 иқтибос
    ABI

  2. Excess tunneling currents in p-Si-n-3C-SiC heterostructures

    Smagul Karazhanov, I. G. Atabaev, Timur Saliev +2

    МақолаSilicon Carbide Semiconductor TechnologiesSemiconductors20010 иқтибос
    ABI

  3. Resonance tunneling of X-electrons in AlAs/GaAs(111) structures: Pseudopotential calculations and models

    G. F. Karavaev, В. Н. Чернышов

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20010 иқтибос
    ABI

  4. Nonlinear and dynamic properties of charge transport in polycrystalline silicon under optical illumination

    K. M. Doshchanov

    МақолаThin-Film Transistor TechnologiesSemiconductors20010 иқтибос
    ABI

  5. Effect of doping with nitrogen on electrical properties and erbium electroluminescence of a-Si:H(Er) films

    O. I. Kon’kov, E. I. Terukov, L. S. Granitsyna

    МақолаThin-Film Transistor TechnologiesSemiconductors20010 иқтибос
    ABI

  6. On the stabilization of electrical properties of compensated silicon as a result of irradiation with 60Co gamma-ray quanta

    Marat S. Yunusov, M. Kаrimov, M. A. Dzhalelov

    МақолаSilicon and Solar Cell TechnologiesSemiconductors20010 иқтибос
    ABI

  7. The effect of external factors on photoelectric parameters of amorphous hydrogenated silicon in relation to the initial characteristics of the films

    Н. Р. Рахимов, U. S. Babakhodzhaev, Kh. Yu. Mavlyanov +1

    МақолаSurface Roughness and Optical MeasurementsSemiconductors20010 иқтибос
    ABI

  8. Rapid thermal annealing of gallium arsenide implanted with sulfur ions

    V. M. Ardyshev, M. V. Ardyshev

    МақолаSemiconductor materials and interfacesSemiconductors20020 иқтибос
    ABI

  9. Synthesis of new carbon-nitrogen nanoclusters by annealing diamond-like carbon films in nitrogen

    I. A. Faĭzrakhmanov, В. В. Базаров, N. V. Kurbatova +2

    МақолаDiamond and Carbon-based Materials ResearchSemiconductors20030 иқтибос
    ABI

  10. Study of photocapacitance in diodes fabricated from silicon doped with vanadium

    Kh. T. Igamberdiev, A. T. Mamadalimov, Р. А. Муминов +2

    МақолаSemiconductor materials and interfacesSemiconductors20030 иқтибос
    ABI

  11. Diffusion of ytterbium in silicon

    D. É. Nazyrov

    МақолаGraphite, nuclear technology, radiation studiesSemiconductors20030 иқтибос
    ABI

  12. Local symmetry of the Pb1−xSnxSe lattice near the zero-gap state

    É. S. Khuzhakulov

    МақолаChalcogenide Semiconductor Thin FilmsSemiconductors20040 иқтибос
    ABI

  13. The electrical and optical properties of InAs irradiated with electrons (∼2 MeV): The energy structure of intrinsic point defects

    V. N. Brudnyı̆, S. N. Grinyaev, N. G. Kolin

    МақолаAdvanced Semiconductor Detectors and MaterialsSemiconductors20050 иқтибос
    ABI

  14. Electron exchange between neutral and ionized germanium centers in PbSe

    E. I. Terukov, É. S. Khuzhakulov

    МақолаSemiconductor materials and interfacesSemiconductors20050 иқтибос
    ABI

  15. Mössbauer study of the Ge two-electron donor centers in PbSe

    Е. И. Теруков, E. S. Khuzhakulov

    МақолаSemiconductor materials and interfacesSemiconductors20050 иқтибос
    ABI

  16. Stimulation of negative magnetoresistance by an electric field and light in silicon doped with boron and manganese

    М. К. Бахадырханов, О. Э. Саттаров, Х. М. Илиев +2

    МақолаSemiconductor materials and interfacesSemiconductors20050 иқтибос
    ABI

  17. Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface

    П. Б. Парчинский, С. И. Власов, Л. Г. Лигай

    МақолаSilicon Nanostructures and PhotoluminescenceSemiconductors20060 иқтибос
    ABI

  18. Diffusion of yittrium in silicon

    D. É. Nazyrov, Muratali Bazarbaev, A. A. Iminov

    МақолаSilicon and Solar Cell TechnologiesSemiconductors20060 иқтибос
    ABI

  19. Diffusion of terbium in silicon

    D. É. Nazyrov

    МақолаGraphite, nuclear technology, radiation studiesSemiconductors20060 иқтибос
    ABI

  20. Scattering of holes by the GaAs/AlAs (111) and (110) interfaces

    G. F. Karavaev, В. Н. Чернышов

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20060 иқтибос
    ABI

  21. Photovoltaic converters based on GaAs and AlGaAs epitaxial layers on GaAs substrates with developed surface area

    И. Н. Арсентьев, A. V. Bobyl, O. Yu. Borkovskaya +7

    Мақолаsolar cell performance optimizationSemiconductors20060 иқтибос
    ABI

  22. A Mössbauer study of Eu donor centers in PbS

    É. S. Khuzhakulov

    МақолаAdvanced Condensed Matter PhysicsSemiconductors20060 иқтибос
    ABI

  23. Dynamics of the defects recharging in coarse-grained p-CdTe films

    Kh. Kh. Ismailov, Zh. Zhanabergenov, Ш. А. Мирсагатов +1

    МақолаAdvanced Semiconductor Detectors and MaterialsSemiconductors20060 иқтибос
    ABI

  24. Nonlinear effects in spin relaxation of cavity polaritons

    D. D. Solnyshkov, I. A. Shelykh, M. M. Glazov +5

    МақолаStrong Light-Matter InteractionsSemiconductors20070 иқтибос
    ABI

  25. Intensification of electroluminescence of ZnSe:(Te, O) crystals as a result of irradiation with γ-ray photons

    D. B. Él’murotova, Э. М. Ибрагимова

    МақолаTerahertz technology and applicationsSemiconductors20070 иқтибос
    ABI