Diffusion of yittrium in silicon
D. É. NazyrovUlugbek National University of Uzbekistan, Tashkent, 700174, UzbekistanMuratali BazarbaevUlugbek National University of Uzbekistan, Tashkent, 700174, UzbekistanA. A. IminovUlugbek National University of Uzbekistan, Tashkent, 700174, Uzbekistan
ABI
Аннотация
The diffusion of yttrium in silicon is studied for the first time. The diffusion is performed in air or vacuum in the temperature range of 1100–1250°C. The temperature dependence of the diffusivity of yttrium in silicon is described by the relation D = 8 × 10−3 exp(−2.9 eV/kT) cm2 s−1. The acceptor nature of yttrium in silicon is revealed.
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