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V. N. Brudnyı̆

8 та иш

V. D. Kuznetsov Siberian Physico-Technical Institute, Tomsk State University

  1. Positron Annihilation and Electrical Properties of Electron-Irradiated (≈ 2 MeV) InAs Crystals

    V. N. Brudnyı̆, S.A. Vorobiev, A. A. Tsoi

    МақолаMuon and positron interactions and applicationsphysica status solidi (a)19821 иқтибос
    ABI

  2. Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions

    B. S. Azikov, V. N. Brudnyı̆, I. V. Kаmenskaya +1

    МақолаSemiconductor materials and interfacesRussian Physics Journal19810 иқтибос
    ABI

  3. Electrical and optical properties of electron-irradiated ZnGeP2

    V. N. Brudnyı̆, V. A. Novikov, E. Popova

    МақолаChalcogenide Semiconductor Thin FilmsRussian Physics Journal19860 иқтибос
    ABI

  4. Electrical Properties and Positron Annihilation in Neutron-Irradiated n-InP

    V. N. Brudnyı̆, V. A. Charchenko, N. G. Kolin +3

    МақолаSemiconductor materials and devicesphysica status solidi (a)19860 иқтибос
    ABI

  5. Positron Trapping at Point Defects in Electron-Irradiated GaAs

    V. N. Brudnyı̆, A. D. Pogrebn Yak, Yu. P. Surov +1

    МақолаMuon and positron interactions and applicationsphysica status solidi (a)19890 иқтибос
    ABI

  6. Electrical properties of p-type ZnGeP2 irradiated by H+ ions

    V. N. Brudnyı̆, V. A. Novikov

    МақолаSemiconductor materials and interfacesRussian Physics Journal19910 иқтибос
    ABI

  7. Radiation defects in semiconductors under hydrostatic pressure

    V. N. Brudnyı̆

    МақолаRare-earth and actinide compoundsSemiconductors19990 иқтибос
    ABI

  8. The electrical and optical properties of InAs irradiated with electrons (∼2 MeV): The energy structure of intrinsic point defects

    V. N. Brudnyı̆, S. N. Grinyaev, N. G. Kolin

    МақолаAdvanced Semiconductor Detectors and MaterialsSemiconductors20050 иқтибос
    ABI