V. M. Ardyshev

1 та иш

Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, pl. Revolyutsii 1, Tomsk, 634050, Russia

1. Rapid thermal annealing of gallium arsenide implanted with sulfur ions

   V. M. Ardyshev, M. V. Ardyshev

   МақолаSemiconductor materials and interfacesSemiconductors20020 иқтибос

   ABIABI:AkademIndex/openalex/2002.article.000046