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Semiconductors

118 та иш

Журнал · ISSN 1063-7826

  1. Energy parameters of two-electron tin centers in PbSe

    С. А. Немов, F. S. Nasredinov, P. P. Seregin +2

    МақолаChalcogenide Semiconductor Thin FilmsSemiconductors20051 иқтибос
    ABI

  2. Statistics of electrons in PbS with U centers

    С. А. Немов, Ф. С. Насрединов, П. П. Серегин +2

    МақолаSolid-state spectroscopy and crystallographySemiconductors20051 иқтибос
    ABI

  3. New Manufacturing Approaches to Texture Formation and Thermal Expansion Matching in the Design of Highly Efficient Silicon Solar Photoconverters

    С. Е. Никитин, A. V. Bobyl, N. R. Avezova +1

    МақолаSilicon and Solar Cell TechnologiesSemiconductors20181 иқтибос
    ABI

  4. Study of certain properties of Si-Si1−xGex (0 ≤ x ≤ 1) structures grown from a restricted tin-based solution-melt by liquid-phase epitaxy

    Б. Сапаев, A. S. Saidov

    МақолаSemiconductor materials and interfacesSemiconductors20051 иқтибос
    ABI

  5. Investigation of the influence of external effects on the behavior of gold impurity in silicon

    С. З. Зайнабидинов, О. О. Маматкаримов, I. G. Tursunov +1

    МақолаSemiconductor materials and interfacesSemiconductors20001 иқтибос
    ABI

  6. Injection enhancement of photocurrent in polycrystalline silicon p+-n-n+ structures

    Р. Алиев

    МақолаSilicon Nanostructures and PhotoluminescenceSemiconductors19971 иқтибос
    ABI

  7. Control of the excitation conditions and the parameters of self-sustained oscillations of current in compensated silicon doped with manganese

    М. К. Бахадырханов, Kh. Azimkhuzhaev, Н. Ф. Зикриллаев +2

    МақолаSilicon and Solar Cell TechnologiesSemiconductors20001 иқтибос
    ABI

  8. Investigation of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions

    T. S. Kamilov, L. L. Aksenova, B. Z. Sharipov +1

    МақолаSemiconductor materials and interfacesSemiconductors20151 иқтибос
    ABI

  9. Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Х. М. Илиев +1

    МақолаSilicon Nanostructures and PhotoluminescenceSemiconductors20151 иқтибос
    ABI

  10. Mechanisms of anomalous photovoltage Effect in CdTe films

    G. A. Nabiev

    МақолаAdvanced Semiconductor Detectors and MaterialsSemiconductors20091 иқтибос
    ABI

  11. Drift mobility of carriers in porous silicon

    N. S. Averkiev, L. P. Kazakova, É. A. Lebedev +1

    МақолаSilicon Nanostructures and PhotoluminescenceSemiconductors20011 иқтибос
    ABI

  12. Polarization-Spectral Dependences of the Three-Photon Interband Absorption of Light and Linear-Circular Dichroism in Semiconductors with Cubic Symmetry

    Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov, I. Éshboltaev +1

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20221 иқтибос
    ABI

  13. An ionization-type Si:S-based semiconductor converter of infrared images with sensitivity in the spectral range of CO2-laser radiation

    V. T. Tulanov, Kh. B. Siyabekov, A.Sh. Davletova +1

    МақолаLaser Design and ApplicationsSemiconductors20011 иқтибос
    ABI

  14. (IV2)1−x(III-V)x solid solutions obtained from a bounded tin melt-solution

    Б. Сапаев, М. С. Саидов, А. С. Саидов +1

    МақолаMaterial Science and ThermodynamicsSemiconductors20041 иқтибос
    ABI

  15. Temperature dependence of the electrical properties of polycrystalline silicon in the dark and in sunlight

    K. M. Doshchanov

    МақолаThin-Film Transistor TechnologiesSemiconductors19970 иқтибос
    ABI

  16. Photoconductivity of sulfur-doped silicon near 10.6 µm

    Kh. B. Siyabekov, V. T. Tulanov

    МақолаThermography and Photoacoustic TechniquesSemiconductors19970 иқтибос
    ABI

  17. Nanoscale mechanism of photoinduced metastability and reversible photodarkening in chalcogenide vitreous semiconductors

    Alexander V. Kolobov, Kazunobu Tanaka

    МақолаPhase-change materials and chalcogenidesSemiconductors19980 иқтибос
    ABI

  18. On the mechanisms of long-term relaxation of the conductivity in compensated Si〈B,S〉 and Si〈B,Rh〉 as a result of irradiation

    Marat S. Yunusov, M. Kаrimov, Б. Л. Оксенгендлер

    МақолаSemiconductor materials and interfacesSemiconductors19980 иқтибос
    ABI

  19. Charge-transfer theory in polycrystalline semiconductors with deep impurity centers

    K. M. Doshchanov

    МақолаThin-Film Transistor TechnologiesSemiconductors19980 иқтибос
    ABI

  20. Numerical analysis of the longitudinal electric current during resonance current flow in a n-GaAs/AlxGa1−xAs superlattice with doped quantum wells

    С. И. Борисенко, G. F. Karavaev

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors19980 иқтибос
    ABI

  21. Radiation defects in semiconductors under hydrostatic pressure

    V. N. Brudnyı̆

    МақолаRare-earth and actinide compoundsSemiconductors19990 иқтибос
    ABI

  22. Photodetectors based on osmium-doped silicon

    Marat S. Yunusov, Р. А. Муминов, G. Nurkuziev +2

    МақолаPhotonic and Optical DevicesSemiconductors19990 иқтибос
    ABI

  23. Change in the energy of Jahn-Teller configurations of vacancy-donor complexes induced by uniaxial strain

    N. S. Averkiev, A. A. Gutkin, M. A. Reshchikov

    МақолаRare-earth and actinide compoundsSemiconductors19990 иқтибос
    ABI

  24. Theory of photovoltaic effects in crystals without an inversion center

    Rustam Yavkachovich Rasulov, Yu. E. Salenko, A. Tukhtamatov +2

    МақолаSolid-state spectroscopy and crystallographySemiconductors19990 иқтибос
    ABI

  25. Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures

    V. M. Botnaryuk, Yu. V. Zhilyaev, Yu. V. Rud +1

    МақолаSilicon Nanostructures and PhotoluminescenceSemiconductors19990 иқтибос
    ABI