N. S. Averkiev

3 та иш

Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnichiskaya ul. 26, St. Petersburg, 194021, Russia

1. Drift mobility of carriers in porous silicon

   N. S. Averkiev, L. P. Kazakova, É. A. Lebedev +1

   МақолаSilicon Nanostructures and PhotoluminescenceSemiconductors20011 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.556185

2. Change in the energy of Jahn-Teller configurations of vacancy-donor complexes induced by uniaxial strain

   N. S. Averkiev, A. A. Gutkin, M. A. Reshchikov

   МақолаRare-earth and actinide compoundsSemiconductors19990 иқтибос

   ABIABI:AkademIndex/openalex/1999.article.000107

3. Quantum corrections to resistance of microblock tellurium at ultralow temperatures under phonon freezing conditions

   I. I. Farbshteǐn, A. V. Chernyaev, D. V. Shamshur +1

   МақолаSemiconductor Quantum Structures and DevicesJournal of Experimental and Theoretical Physics20100 иқтибос

   ABIABI:AkademIndex/openalex/2010.article.000407