A.Sh. Davletova

5 та иш

Ulugbek State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, Uzbekistan

1. An ionization-type Si:S-based semiconductor converter of infrared images with sensitivity in the spectral range of CO2-laser radiation

   V. T. Tulanov, Kh. B. Siyabekov, A.Sh. Davletova +1

   МақолаLaser Design and ApplicationsSemiconductors20011 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.609364

2. Dependence of spectral and volt-amper characteristics forms of IR-radiating diodes from the way, material and doping level of the working layers, produced by liquid-phase method

   А. Кутлимратов, A.Sh. Davletova, S. Khakimova

   МақолаOptical and Acousto-Optic Technologies20040 иқтибос

   ABIABI:AkademIndex/openalex/2004.article.000386

3. Peculiarities of spectral characteristics of IR-light emitting diodes obtained by the liquid phase epitaxy

   А. Кутлимратов, A.Sh. Davletova

   МақолаSemiconductor Lasers and Optical Devices20060 иқтибос

   ABIABI:AkademIndex/openalex/2006.article.000430

4. Light emitting diodes structures obtained by overlapping the liquid phase epitaxy and gas phase diffusion of Zn

   А. Кутлимратов, A.Sh. Davletova

   МақолаAdvanced Semiconductor Detectors and Materials20060 иқтибос

   ABIABI:AkademIndex/openalex/2006.article.000431

5. Sensitivity of dislocation engineered Si p-n junctions to influence of illumination and ultrasound

   A.Sh. Davletova, Smagul Karazhanov

   МақолаSemiconductor materials and interfacesInorganic Materials20090 иқтибос

   ABIABI:AkademIndex/openalex/2009.article.000359