V. T. Tulanov

3 та иш

Ulugbek State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, Uzbekistan

1. An ionization-type Si:S-based semiconductor converter of infrared images with sensitivity in the spectral range of CO2-laser radiation

   V. T. Tulanov, Kh. B. Siyabekov, A.Sh. Davletova +1

   МақолаLaser Design and ApplicationsSemiconductors20011 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.609364

2. Effect of the degree of compensation of sulfur impurity levels on the photoconductivity of silicon near 10.6 µm

   G. B. Gorlin, V. T. Tulanov, Kh. B. Siyabekov

   МақолаSemiconductor materials and interfacesTechnical Physics19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000202

3. Photoconductivity of sulfur-doped silicon near 10.6 µm

   Kh. B. Siyabekov, V. T. Tulanov

   МақолаThermography and Photoacoustic TechniquesSemiconductors19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000231