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Energy parameters of two-electron tin centers in PbSe

С. А. НемовSt. Petersburg State Polytechnical University, ul. Politekhnicheskaya 25, St. Petersburg, 195251, RussiaF. S. NasredinovSt. Petersburg State Polytechnical University, ul. Politekhnicheskaya 25, St. Petersburg, 195251, RussiaP. P. SereginSt. Petersburg State Polytechnical University, ul. Politekhnicheskaya 25, St. Petersburg, 195251, RussiaN. P. SereginInstitute of Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, 198103, RussiaÉ. S. KhuzhakulovTashkent Oblast State Pedagogical University, Angren, 702500, Uzbekistan
Semiconductorsjournal2005en
ABI

Аннотация

Relations that make it possible to use an experimentally measured temperature dependence of carrier concentration to determine the Hubbard energy U and temperature dependence of the Fermi level F for two-electron tin centers in lead selenide are derived. A study of Pb1−x−y SnxNaySe solid solutions shows that their Fermi level in the temperature region 100–600 K lies below the valence band top E v and that their F(T) dependences are linear, with extrapolation to T = 0 yielding E V −F = 210±10 meV. The Hubbard energy of the two-electron tin centers in PbSe is found to be U = −80±20 meV.

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