Photodetectors based on osmium-doped silicon
Marat S. YunusovS. V. Starodubtsev Physicotechnical Institute, 700084, Tashkent, UzbekistanР. А. МуминовS. V. Starodubtsev Physicotechnical Institute, 700084, Tashkent, UzbekistanG. NurkuzievS. V. Starodubtsev Physicotechnical Institute, 700084, Tashkent, UzbekistanN. GapparovS. V. Starodubtsev Physicotechnical Institute, 700084, Tashkent, UzbekistanA. KholboevS. V. Starodubtsev Physicotechnical Institute, 700084, Tashkent, Uzbekistan
ABI
Аннотация
Osmium-doped silicon photodetectors with a low control voltage have been constructed. The n-type Si was chosen as the initial material. The silicon was doped with osmium using a diffusion method. The characteristics of these structures are studied at 300 K.
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