Temperature dependence of the electrical properties of polycrystalline silicon in the dark and in sunlight
K. M. DoshchanovPhysicotechnical Institute Science and Industrial Union “Physics-Sun,”, Uzbekistan Academy of Sciences, 700084, Tashkent, Uzbekistan
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Аннотация
The electric resistance and effective carrier mobility in polycrystalline silicon are calculated as functions of temperature and the photoexcitation level. The theoretical results are in agreement with existing experimental data.
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