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13 та иш

Иш: Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

  1. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques202117 иқтибос
    ABI

  2. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    МақолаSemiconductor materials and interfacesModern Physics Letters B202317 иқтибос
    ABI

  3. Obtaining higher manganese silicide films with high thermoelectric properties

    I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

    МақолаSemiconductor materials and interfacesE3S Web of Conferences20239 иқтибос
    ABI

  4. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

    Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

    МақолаPhotocathodes and Microchannel PlatesTechnical Physics20198 иқтибос
    ABI

  5. Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

    Kh. Kh. Boltaev, J. Sh. Sodikjanov, Д. А. Ташмухамедова +1

    МақолаSemiconductor materials and devicesTechnical Physics20177 иқтибос
    ABI

  6. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

    S. B. Donaev, V N Karimova, A T Azimov +2

    МақолаNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 иқтибос
    ABI

  7. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

    S. B. Donaev, Б. Е. Умирзаков

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20202 иқтибос
    ABI

  8. Study of the Processes of the Formation of Nanoscale MoO3 Films by Thermal Oxidation and Ion Bombardment

    Gulmira X. Allayarova, Д. А. Ташмухамедова, R. Djabbarganov +1

    МақолаTransition Metal Oxide NanomaterialsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20211 иқтибос
    ABI

  9. The effect of implantation barium ions on the surface of Pd and Pd-Ba under ion bombardment

    S. B. Donaev, Jakhongir Normuminov, A.M. Rakhimov +2

    МақолаIon-surface interactions and analysisIOP Conference Series Earth and Environmental Science20201 иқтибос
    ABI

  10. Studying the Trajectory of Scattered Ions from Surface Atomic Rows SiO<sub>2</sub>(001)&lt;110&gt; at Glancing Incidence

    Atabek S. Ashirov, Mukhtorjon K. Karimov, Uchkun Kutliev +1

    МақолаIon-surface interactions and analysis20240 иқтибос
    ABI

  11. Effect of the Angle of Incidence of Low-Energy Ar+ Ion Beams on the Composition and Structure of the GaAs Surface

    Д. А. Ташмухамедова, Б. Е. Умирзаков, Z. A. Tursunmetova

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 иқтибос
    ABI

  12. Study of regularities of formation of thin three-component CdMgTe films on CdTe(111) surface upon implantation of Mg ions and subsequent annealing

    Д. А. Ташмухамедова, A. A. Abduvayitov, X. X. Boltaev +2

    МақолаAdvanced Semiconductor Detectors and MaterialsAIP conference proceedings20250 иқтибос
    ABI

  13. Study of the temperature dependence of the electrophysical and crystal structure of a thin coating of manganese silicide

    B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +1

    МақолаSemiconductor materials and interfacesMaterials Today Communications20260 иқтибос
    ABI