Effect of the Angle of Incidence of Low-Energy Ar+ Ion Beams on the Composition and Structure of the GaAs Surface

The effect of Ar+ ion bombardment with an energy of E0 = 1 keV on the composition, structure, and band gap of GaAs is studied by Auger-electron- and light-absorption spectroscopy. The dependences of changes in the composition and electronic structure of GaAs surface layers on the dose D and angle of incidence φ (relative to the surface normal) of Ar+ ions are determined for the first time. It is shown that, at φ = 0, Ar+ ion bombardment at D = 5 × 1015 cm‒2 leads to an increase in the As surface concentration relative to pure GaAs by up to 15–20 at % and, at D = 1017 cm‒2, to its decrease by 12–15 at %. It is established that, at large angles of incidence (φ = 72°) of Ar+ ions, the Ga and As surface concentrations change insignificantly. The observed changes are explained.

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