Effect of the O+2-ion bombardment on the TiN composition and structure
З. А. ИсахановInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, ul. Durmon iuli 33, Tashkent, 100125, UzbekistanБ. Е. УмирзаковInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, ul. Durmon iuli 33, Tashkent, 100125, UzbekistanМ. К. РузибаеваInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, ul. Durmon iuli 33, Tashkent, 100125, UzbekistanS. B. DonaevInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, ul. Durmon iuli 33, Tashkent, 100125, Uzbekistan
ABI
Аннотация
The implantation of the O 2 + ions at low energies of E 0 ≤ 2–3 keV and high doses of D ≥ 1016 cm−2 leads to significant variations in the composition and amorphization of the TiN surface layer. The postimplantation annealing at a temperature of T ≈ 950–1000 K over 30 min results in the formation of a polycrystalline film with approximate composition TiN0.6O0.4. Based on the analysis of photoelectron spectra, we assume that the TiN and TiN0.6O0.4 films represent degenerate narrow-band-gap n-type semiconductors.
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