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Temperature dependence of width band gap in <i>In<sub>x</sub>ga<sub>1-X</sub>as</i>quantum well in presence of transverse strong magnetic field

U. I. ErkaboevNamangan Institute of Engineering and Technology, Namangan, UzbekistanN. A. SayidovNamangan Institute of Engineering and Technology, Namangan, UzbekistanUlugbek NegmatovNamangan Institute of Engineering and Technology, Namangan, UzbekistanR. G. RakhimovNamangan Institute of Engineering and Technology, Namangan, UzbekistanJ. I. MirzaevNamangan Institute of Engineering and Technology, Namangan, Uzbekistan
E3S Web of Conferencesjournal2023en
ABI

Аннотация

This article investigated the temperature dependence of the width band gap in In x Ga 1-x As quantum well in the presence of a transverse strong magnetic field. A new method was proposed for determining the width band gap of GaAs/In x Ga 1-x As heterostructures based on a In x Ga 1-x As quantum well in the presence of a magnetic field and temperature. An analytical expression is obtained for calculating the width band gap of a rectangular quantum well at various magnetic fields and temperatures.

Мавзулар

Semiconductor Quantum Structures and DevicesQuantum and electron transport phenomenaAdvanced Semiconductor Detectors and Materials

Идентификаторлар

DOI
10.1051/e3sconf/202340104042

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