Research of the semiconductor sensors based on anomal photovoltaic effect with highly sensitive parameters of the deformation
Odinakhon RayimdjanovaFergana branch of the Tashkent University of Information Technologies named after Muhammad al-Khorezmi, Fergana, UzbekistanF. MukhtarovFergana branch of the Tashkent University of Information Technologies named after Muhammad al-Khorezmi, Fergana, UzbekistanMa’murjon IsmoilovFergana branch of the Tashkent University of Information Technologies named after Muhammad al-Khorezmi, Fergana, UzbekistanHasanboy AbdusamatovFergana branch of the Tashkent University of Information Technologies named after Muhammad al-Khorezmi, Fergana, UzbekistanMohigul AbdullaevaFergana branch of the Tashkent University of Information Technologies named after Muhammad al-Khorezmi, Fergana, UzbekistanMuhriddin MadaminovFergana branch of the Tashkent University of Information Technologies named after Muhammad al-Khorezmi, Fergana, Uzbekistan
ABI
Аннотация
Optical parameters of thin polycrystalline semiconductor films during deformation (t, n, 𝜆, R, T 𝑣a, 𝜑 𝜎 ) changes. An optical elastic effect has been created. Its physical basis is that deformation affects the shape of the zonal diagram by changing the crystal lattice constants. This condition gives rise to various optical and other electronic phenomena in semiconductor thin films .
Мавзулар
Идентификаторлар
Иқтибослар ва манбалар
Кўрсаткичлар — AkademScholar · Тез орада