Estimation of changes in parameters of a crystal lattice and energy bands upon variation in the size of nanocrystals and nanofilms of silicides prepared by ion implantation
Б. Е. УмирзаковAbu Raikhan Beruni Tashkent State Technical University, Tashkent, UzbekistanД. А. ТашмухамедоваAbu Raikhan Beruni Tashkent State Technical University, Tashkent, UzbekistanKh. Kh. KurbanovAbu Raikhan Beruni Tashkent State Technical University, Tashkent, Uzbekistan
ABI
Аннотация
Changes in the parameters of the crystal lattice and energy bands of CoSi2 nanofilms and nanocrystals formed in the surface Si layers by ion implantation combined with annealing are studied. It is shown that the band gap E g of CoSi2/Si(100) nanofilms with the thickness θ ≤ 40–50 Å is higher by ∼0.1 eV than for “thick” films; in the case of nanocrystals, E g is 0.3–0.4 eV higher than for macrocrystals.
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