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Ушбу ишга иқтибос қилган ишлар

12 та иш

Иш: Estimation of changes in parameters of a crystal lattice and energy bands upon variation in the size of nanocrystals and nanofilms of silicides prepared by ion implantation

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201523 иқтибос
    ABI

  2. On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light

    Y. S. Ergashov, Д. А. Ташмухамедова, Б. Е. Умирзаков

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 иқтибос
    ABI

  3. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    МақолаSemiconductor materials and interfacesTechnical Physics201319 иқтибос
    ABI

  4. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

    Y. S. Ergashov

    МақолаElectron and X-Ray Spectroscopy TechniquesTechnical Physics201714 иқтибос
    ABI

  5. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing

    Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201414 иқтибос
    ABI

  6. Applying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films

    D. M. Muradkabilov, Д. А. Ташмухамедова, Б. Е. Умирзаков

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201314 иқтибос
    ABI

  7. Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20188 иқтибос
    ABI

  8. Emission and optical properties of SiO2/Si thin films

    Д. А. Ташмухамедова, M. B. Yusupjanova

    МақолаSilicon Nanostructures and PhotoluminescenceJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20166 иқтибос
    ABI

  9. Analyzing the Change in the Composition of a CdTe Surface upon Implanting $$O_{2}^{ + }$$ Ions and Subsequent Annealing

    A. A. Abduvayitov, Kh. Kh. Boltaev, Б. Е. Умирзаков +2

    МақолаAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics20241 иқтибос
    ABI

  10. Estimation of the sizes of disordered surface regions of Cu and Ag thin films using the ion transmission method

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +2

    МақолаCopper Interconnects and ReliabilityJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20130 иқтибос
    ABI

  11. Effect of the Angle of Incidence of Low-Energy Ar+ Ion Beams on the Composition and Structure of the GaAs Surface

    Д. А. Ташмухамедова, Б. Е. Умирзаков, Z. A. Tursunmetova

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 иқтибос
    ABI

  12. Influence of Implantation of Active Metal Ions on the Composition, Emission and Optical Properties of MgO Films

    Maxsuna Yusupjonova, Д. А. Ташмухамедова, Б. Е. Умирзаков +3

    МақолаZnO doping and propertiesEast European Journal of Physics20250 иқтибос
    ABI