Semiconductor materials and interfaces

771 та иш

Exploring Lithium Diffusion in LiF with Machine Learning Potentials: From Point Defects to Collective Ring Diffusion
Paolo De Angelis, Umberto Raucci, Francesco Mambretti +4
ПрепринтSemiconductor materials and interfacesnpj Computational Materials20250 иқтибос
ABI
Low-Temperature Electrophysical and optical Properties of p-Si/n-CdS Heterojunctions
Jo`shqin Abdullayev, I. B. Sapaev, Jamoliddin Razzokov +2
ПрепринтSemiconductor materials and interfacesSSRN Electronic Journal20250 иқтибос
ABI
Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation
J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2
МақолаSemiconductor materials and interfacesJournal of Electronic Materials20260 иқтибос
ABI
Study of the temperature dependence of the electrophysical and crystal structure of a thin coating of manganese silicide
B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +1
МақолаSemiconductor materials and interfacesMaterials Today Communications20260 иқтибос
ABI
Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions
Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3
МақолаSemiconductor materials and interfacesJournal of Electronic Materials20260 иқтибос
ABI
STUDY of the influence of temperature and gamma radiation on the crystal structure of a thin TiO2 coating obtained on A Si (111) surface
B.E. Umirzakov, Z.A. Isaxanov, I.R. Bekpulatov +3
МақолаChemical and Physical Properties of MaterialsPhysics Letters A20260 иқтибос
ABI
EXPERIMENTAL STUDY AND COMPUTATIONAL SIMULATIONAL ON THE RESISTIVITY ANSISOTROPY OF METAL AND SEMICONDUCTOR SINGLE CRYSTALS
Ogabek Toshpulatov
МақолаAdvanced Materials and Semiconductor TechnologiesZenodo (CERN European Organization for Nuclear Research)20260 иқтибос
ABI
EXPERIMENTAL STUDY AND COMPUTATIONAL SIMULATIONAL ON THE RESISTIVITY ANSISOTROPY OF METAL AND SEMICONDUCTOR SINGLE CRYSTALS
Ogabek Toshpulatov
МақолаAdvanced Materials and Semiconductor TechnologiesZenodo (CERN European Organization for Nuclear Research)20260 иқтибос
ABI
Mathematical Analysis of the C-V of Nanowires Based on Si and GaAs
Dostonbek Abduraimov, Avaz Ergashev, Mehrigiyo Uktamova +3
МақолаNanowire Synthesis and ApplicationsEPJ Web of Conferences20260 иқтибос
ABI
Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction
I.B. Sapaev, S.O. Sadullaev, Kh. N. Juraev +4
МақолаSemiconductor materials and interfacesResults in Physics20260 иқтибос
ABI
Microstructural, phase and electrophysical properties of TiSi2 alloy synthesized by Spark Plasma Sintering
B.D. Igamov, I.R. Bekpulatov, A.M. Normamatov +3
МақолаSemiconductor materials and interfacesJournal of Alloys and Compounds20260 иқтибос
ABI
YUQORI HARORATLARDA (800–1200 °C) GERMANIYNING KREMNIYDA DIFFUZIYA JARAYONLARINI TADQIQ QILISH
Baxromjon Abdukaxxarovich Abduraxmanov, G'iyosiddin Abdivahob oʻgʻli Kushiyev, Davlatbek Davronbekovich Matyakubov +1
МақолаSemiconductor materials and interfacesZenodo (CERN European Organization for Nuclear Research)20260 иқтибос
ABI
YUQORI HARORATLARDA (800–1200 °C) GERMANIYNING KREMNIYDA DIFFUZIYA JARAYONLARINI TADQIQ QILISH
Baxromjon Abdukaxxarovich Abduraxmanov, G'iyosiddin Abdivahob oʻgʻli Kushiyev, Davlatbek Davronbekovich Matyakubov +1
МақолаSemiconductor materials and interfacesZenodo (CERN European Organization for Nuclear Research)20260 иқтибос
ABI
The effect of thermal treatment on the absorption spectra of background impurity (oxygen and carbon) atoms in p-Si<B,Pt> structures
Biloliddin M. Ergashev, Madinaxon Muydinova, Yorkin A. Mamataxunov +4
МақолаSemiconductor materials and interfaces20260 иқтибос
ABI
The Influence of Impurity Nano- and Microclusters on the Photovoltaic and Electrophysical Properties of Silicon
N. F. Zikrillaev, K. S. Ayupov, Kh. F. Zikrillaev +4
МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20260 иқтибос
ABI
The Influence of γ-Irradiation on the Current Transport Mechanism upon the Application of Reverse Bias to the Al/p-CdTe/Mo Structure
A. S. Achilov, R. R. Kabulov, O. A. Abdulkhaev +4
МақолаAdvanced Semiconductor Detectors and MaterialsSurface Engineering and Applied Electrochemistry20260 иқтибос
ABI
Room-Temperature Ferromagnetism and Spin Polarization in Silicon Doped with Manganese
O. E. Sattarov, Bahromjon A. Abdurakhmanov, Giyos A. Kushiev +3
МақолаZnO doping and propertiesEast European Journal of Physics20260 иқтибос
ABI
Formation of Cu₁₅Si₄/Si Nanophase Films on Silicon Surfaces
K. Dovranov, M. Normuradov, X. Davranov +5
МақолаSemiconductor materials and interfacesEast European Journal of Physics20260 иқтибос
ABI
Study of the effect of thermal treatment OF Mn4Si7 and CoSi2 thin films using an infrared lamp in a high-temperature furnace in inert gas environments (Ar, Kr, Xe) On their crystal structure
B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +5
МақолаSemiconductor materials and interfacesSolid State Sciences20260 иқтибос
ABI
Development and Investigation of Semiconductor Detectors of Ionizing Radiation Based on p-Si/n-InP Heterostructures
S. A. Radzhapov, A. S. Saidov, Sh. N. Usmonov +1
МақолаAdvanced Materials and Semiconductor TechnologiesInstruments and Experimental Techniques20260 иқтибос
ABI
<p>Determination of the Energy Spectrum of the Density of States Under Uniaxial Pressure</p>
Mufazzalshoh Rakhmanov, Ikromjon Tursunov, Odiljon Mamatkarimov +2
ПрепринтSemiconductor materials and interfacesSSRN Electronic Journal20260 иқтибос
ABI