The effect of thermal treatment on the absorption spectra of background impurity (oxygen and carbon) atoms in p-Si<B,Pt> structures

The paper examines the influence of high-temperature thermal treatment, a platinum (Pt) surface layer, and Pt diffusion on the behavior of background oxygen and carbon impurities in monocrystalline p-type silicon (Czochralski method). FTIR spectroscopy was used to analyze the infrared absorption features and quantitatively determine impurity concentrations in samples treated at 950 °C, 1050 °C, and 1150 °C. When introducing platinum atoms into the silicon lattice at these temperatures, the oxygen concentration increases due to the formation of stable Pt–O complexes, while the carbon concentration decreases dramatically through chemical reactions and volatilization. A high temperature of 1150 °C reportedly causes Pt diffusion, creating additional lattice dislocations that promote interstitial migration pathways, thereby enabling better diffusion and redistribution of oxygen and carbon atoms. The research results provide an essential understanding of how thermal and doping processes affect the behavior of silicon impurities, thereby improving the performance of microelectronic and photovoltaic devices.

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