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Andrey Orekhov

13 works

A.V. Shubnikov Institute of Crystallography

  1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    ArticleSemiconductor materials and interfacesApplied Solar Energy201921 citations
    ABI

  2. Electron microscopy characterization of higher manganese silicide film structure on silicon

    Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

    ArticleSemiconductor materials and interfacesNanotechnologies in Russia20167 citations
    ABI

  3. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    ArticleSemiconductor materials and interfacesSemiconductors20175 citations
    ABI

  4. Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes

    Д. М. Шукурова, Andrey Orekhov, B. Z. Sharipov +2

    ArticleSemiconductor materials and interfacesTechnical Physics20114 citations
    ABI

  5. Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    ArticleSemiconductor materials and interfacesEurasian journal of physics and functional materials20183 citations
    ABI

  6. About the mechanism of formation and growth of the higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

    ArticleSemiconductor materials and interfaces20053 citations
    ABI

  7. On the growth of higher manganese silicide films on silicon

    Andrey Orekhov, T. S. Kamilov, Abdumalik Gaibov +2

    ArticleSemiconductor materials and interfacesTechnical Physics20102 citations
    ABI

  8. Investigation of the Magnesium Silicide -- Mg<sub>2</sub>Si Films

    T. S. Kamilov, D.K. Kabilov, R.Kh. Kamilova +4

    ArticleSemiconductor materials and interfaces20060 citations
    ABI

  9. About the Interface Between the Higher Manganese Silicide Film and Si (111)

    T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5

    ArticleSemiconductor materials and interfaces20060 citations
    ABI

  10. Overgrowth of the Mn4Si7 phase on/around the hexagonal SiC and cubic MnSi impurity phases in the Mn4Si7/Si films

    Andrey Orekhov, T. S. Kamilov, Elena I. Suvorova

    ChapterSemiconductor materials and interfaces20080 citations
    ABI

  11. Development the obtaining technology of highest manganese silicide films for thermoelectric microelectric devices

    B. Z. Sharipov, Д. М. Шукурова, M.E. Azimov +3

    ArticleSemiconductor materials and interfaces20100 citations
    ABI

  12. The mechanism of photocurrent saturation and appearance of negative differential photoconductivity in heterostructures Mn 4 Si 7 -Si 4 Si 7 and Mn 4 Si 7 -Si<Mn≥-M

    T. S. Kamilov, B. Z. Sharipov, V. V. Klechkovskaya +1

    ArticleSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20110 citations
    ABI

  13. Selecting a Target for Obtaining Films of Higher Manganese Silicide Using Magnetron Sputtering

    М. S. Lukasov, Н. А. Архарова, Andrey Orekhov +2

    ArticleSemiconductor materials and interfacesCrystallography Reports20240 citations
    ABI