Anton S. Orekhov

3 works

National Research Center “Kurchatov Institute,”, pl. Akademika Kurchatova 1, Moscow, 123182, Russia

1. Electron microscopy characterization of higher manganese silicide film structure on silicon

   Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

   ArticleSemiconductor materials and interfacesNanotechnologies in Russia20167 citations

   ABIABI:AkademIndex/openalex/2026.other.079735

2. Study of peculiarities of heat generation at the Mn 4 Si 7 -Si heterostructure interface

   D.M. Shukurova, T. S. Kamilov, B. Z. Sharipov +2

   ArticleSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20100 citations

   ABIABI:AkademIndex/openalex/2010.article.000566

3. Selecting a target for obtaining films of higher manganese silicide using magnetron sputtering

   М. S. Lukasov, Н. А. Архарова, Anton S. Orekhov +2

   ArticleSemiconductor materials and interfacesКристаллография20240 citations

   ABIABI:AkademIndex/openalex/2024.article.008195