Anton S. Orekhov

3 ta ish

National Research Center “Kurchatov Institute,”, pl. Akademika Kurchatova 1, Moscow, 123182, Russia

1. Electron microscopy characterization of higher manganese silicide film structure on silicon

   Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

   MaqolaSemiconductor materials and interfacesNanotechnologies in Russia20167 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.079735

2. Study of peculiarities of heat generation at the Mn 4 Si 7 -Si heterostructure interface

   D.M. Shukurova, T. S. Kamilov, B. Z. Sharipov +2

   MaqolaSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20100 iqtibos

   ABIABI:AkademIndex/openalex/2010.article.000566

3. Selecting a target for obtaining films of higher manganese silicide using magnetron sputtering

   М. S. Lukasov, Н. А. Архарова, Anton S. Orekhov +2

   MaqolaSemiconductor materials and interfacesКристаллография20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.008195