М. S. Lukasov

4 ta ish

Shubnikov Institute of Crystallography, Kurchatov Complex of Crystallography and Photonics, National Research Center “Kurchatov Institute”, 119333, Moscow, Russia

1. Selecting a Target for Obtaining Films of Higher Manganese Silicide Using Magnetron Sputtering

   М. S. Lukasov, Н. А. Архарова, Andrey Orekhov +2

   MaqolaSemiconductor materials and interfacesCrystallography Reports20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.007559

2. Selecting a target for obtaining films of higher manganese silicide using magnetron sputtering

   М. S. Lukasov, Н. А. Архарова, Anton S. Orekhov +2

   MaqolaSemiconductor materials and interfacesКристаллография20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.008195

3. Structure and Thermoelectric Properties of β-FeSi2 Doped with Cobalt

   F. Yu. Solomkin, Н. В. Шаренкова, Г. Н. Исаченко +5

   MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.008222

4. Structure and thermoelectric properties of β-FeSi<sub>2</sub> doped with cobalt

   F. Yu. Solomkin, Н. В. Шаренкова, Г. Н. Исаченко +5

   MaqolaSemiconductor materials and interfacesПоверхность Рентгеновские синхротронные и нейтронные исследования20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.009268