Electron microscopy characterization of higher manganese silicide film structure on silicon
Andrey OrekhovNational Research Center “Kurchatov Institute,”, pl. Akademika Kurchatova 1, Moscow, 123182, RussiaT. S. KamilovTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, UzbekistanAnton S. OrekhovNational Research Center “Kurchatov Institute,”, pl. Akademika Kurchatova 1, Moscow, 123182, RussiaН. А. АрхароваShubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics,”, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 119333, RussiaE. V. RakovaShubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics,”, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 119333, RussiaV. V. KlechkovskayaShubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics,”, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 119333, Russia
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The structure and composition of higher manganese silicide (HMS) films on Si(111) substrate are studied by high-resolution transmission electron microscopy, electron diffraction, and energy-dispersive X-ray spectroscopy. The formation of Mn4Si7 HMS film by the deposition of the gas-phase manganese onto silicon at 1040°C is observed. The film/substrate interface is semicoherent and does not contain any intermediate layer. The interface structure is refined by computer simulation. The orientation relationship $$\left( {\overline 1 \overline 2 4} \right)\left[ {443} \right]M{n_4}S{i_7}||\left( {1\overline 1 \overline 1 } \right)\left[ {001} \right]Si$$ between the film and substrate is determined.
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