On the growth of higher manganese silicide films on silicon
Andrey OrekhovShubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 119333, RussiaT. S. KamilovBeruni State Technical University, ul. Universitetskaya 2, Tashkent, 700095, UzbekistanAbdumalik GaibovBeruni State Technical University, ul. Universitetskaya 2, Tashkent, 700095, UzbekistanK. I. VakhabovBeruni State Technical University, ul. Universitetskaya 2, Tashkent, 700095, UzbekistanV. V. KlechkovskayaShubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 119333, Russia
ABI
Abstract
The growth of manganese silicide films on silicon under the conditions of equilibrium and non-equilibrium diffusion doping of the silicon from the vapor phase is studied for different weight percent of the dopant.