Selecting a Target for Obtaining Films of Higher Manganese Silicide Using Magnetron Sputtering
М. S. LukasovShubnikov Institute of Crystallography, Kurchatov Complex of Crystallography and Photonics, National Research Center “Kurchatov Institute”, 119333, Moscow, RussiaН. А. АрхароваShubnikov Institute of Crystallography, Kurchatov Complex of Crystallography and Photonics, National Research Center “Kurchatov Institute”, 119333, Moscow, RussiaAndrey OrekhovShubnikov Institute of Crystallography, Kurchatov Complex of Crystallography and Photonics, National Research Center “Kurchatov Institute”, 119333, Moscow, RussiaT. S. KamilovTashkent State Technical University named after Islam Karimov, 700095, Tashkent, UzbekistanV. V. KlechkovskayaShubnikov Institute of Crystallography, Kurchatov Complex of Crystallography and Photonics, National Research Center “Kurchatov Institute”, 119333, Moscow, Russia
ABI
Аннотация
Thin manganese silicide films were obtained on mica by magnetron sputtering from targets of three types. The microstructure and elemental composition of the targets and films were studied by scanning electron microscopy and reflection electron diffraction. The phase composition and structure of the films over depth (cuts) were controlled by scanning and transmission electron microscopy. It has been shown that, when depositing films from poly- and single-crystal targets of higher manganese silicide, in contrast to a target from sintered Мn and Si powders, one can obtain polycrystalline films of higher manganese silicide of the Mn4Si7 composition after subsequent 1-h annealing at a temperature of 800 K and a pressure of 10–3 Pa.
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