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Semiconductors

Работ: 118

Журнал · ISSN 1063-7826

  1. Energy parameters of two-electron tin centers in PbSe

    С. А. Немов, F. S. Nasredinov, P. P. Seregin +2

    СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2005Цитирований: 1
    ABI

  2. Statistics of electrons in PbS with U centers

    С. А. Немов, Ф. С. Насрединов, П. П. Серегин +2

    СтатьяSolid-state spectroscopy and crystallographySemiconductors2005Цитирований: 1
    ABI

  3. New Manufacturing Approaches to Texture Formation and Thermal Expansion Matching in the Design of Highly Efficient Silicon Solar Photoconverters

    С. Е. Никитин, A. V. Bobyl, N. R. Avezova +1

    СтатьяSilicon and Solar Cell TechnologiesSemiconductors2018Цитирований: 1
    ABI

  4. Study of certain properties of Si-Si1−xGex (0 ≤ x ≤ 1) structures grown from a restricted tin-based solution-melt by liquid-phase epitaxy

    Б. Сапаев, A. S. Saidov

    СтатьяSemiconductor materials and interfacesSemiconductors2005Цитирований: 1
    ABI

  5. Investigation of the influence of external effects on the behavior of gold impurity in silicon

    С. З. Зайнабидинов, О. О. Маматкаримов, I. G. Tursunov +1

    СтатьяSemiconductor materials and interfacesSemiconductors2000Цитирований: 1
    ABI

  6. Injection enhancement of photocurrent in polycrystalline silicon p+-n-n+ structures

    Р. Алиев

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors1997Цитирований: 1
    ABI

  7. Control of the excitation conditions and the parameters of self-sustained oscillations of current in compensated silicon doped with manganese

    М. К. Бахадырханов, Kh. Azimkhuzhaev, Н. Ф. Зикриллаев +2

    СтатьяSilicon and Solar Cell TechnologiesSemiconductors2000Цитирований: 1
    ABI

  8. Investigation of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions

    T. S. Kamilov, L. L. Aksenova, B. Z. Sharipov +1

    СтатьяSemiconductor materials and interfacesSemiconductors2015Цитирований: 1
    ABI

  9. Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Х. М. Илиев +1

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2015Цитирований: 1
    ABI

  10. Mechanisms of anomalous photovoltage Effect in CdTe films

    G. A. Nabiev

    СтатьяAdvanced Semiconductor Detectors and MaterialsSemiconductors2009Цитирований: 1
    ABI

  11. Drift mobility of carriers in porous silicon

    N. S. Averkiev, L. P. Kazakova, É. A. Lebedev +1

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2001Цитирований: 1
    ABI

  12. Polarization-Spectral Dependences of the Three-Photon Interband Absorption of Light and Linear-Circular Dichroism in Semiconductors with Cubic Symmetry

    Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov, I. Éshboltaev +1

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2022Цитирований: 1
    ABI

  13. An ionization-type Si:S-based semiconductor converter of infrared images with sensitivity in the spectral range of CO2-laser radiation

    V. T. Tulanov, Kh. B. Siyabekov, A.Sh. Davletova +1

    СтатьяLaser Design and ApplicationsSemiconductors2001Цитирований: 1
    ABI

  14. (IV2)1−x(III-V)x solid solutions obtained from a bounded tin melt-solution

    Б. Сапаев, М. С. Саидов, А. С. Саидов +1

    СтатьяMaterial Science and ThermodynamicsSemiconductors2004Цитирований: 1
    ABI

  15. Temperature dependence of the electrical properties of polycrystalline silicon in the dark and in sunlight

    K. M. Doshchanov

    СтатьяThin-Film Transistor TechnologiesSemiconductors1997Цитирований: 0
    ABI

  16. Photoconductivity of sulfur-doped silicon near 10.6 µm

    Kh. B. Siyabekov, V. T. Tulanov

    СтатьяThermography and Photoacoustic TechniquesSemiconductors1997Цитирований: 0
    ABI

  17. Nanoscale mechanism of photoinduced metastability and reversible photodarkening in chalcogenide vitreous semiconductors

    Alexander V. Kolobov, Kazunobu Tanaka

    СтатьяPhase-change materials and chalcogenidesSemiconductors1998Цитирований: 0
    ABI

  18. On the mechanisms of long-term relaxation of the conductivity in compensated Si〈B,S〉 and Si〈B,Rh〉 as a result of irradiation

    Marat S. Yunusov, M. Kаrimov, Б. Л. Оксенгендлер

    СтатьяSemiconductor materials and interfacesSemiconductors1998Цитирований: 0
    ABI

  19. Charge-transfer theory in polycrystalline semiconductors with deep impurity centers

    K. M. Doshchanov

    СтатьяThin-Film Transistor TechnologiesSemiconductors1998Цитирований: 0
    ABI

  20. Numerical analysis of the longitudinal electric current during resonance current flow in a n-GaAs/AlxGa1−xAs superlattice with doped quantum wells

    С. И. Борисенко, G. F. Karavaev

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors1998Цитирований: 0
    ABI

  21. Radiation defects in semiconductors under hydrostatic pressure

    V. N. Brudnyı̆

    СтатьяRare-earth and actinide compoundsSemiconductors1999Цитирований: 0
    ABI

  22. Photodetectors based on osmium-doped silicon

    Marat S. Yunusov, Р. А. Муминов, G. Nurkuziev +2

    СтатьяPhotonic and Optical DevicesSemiconductors1999Цитирований: 0
    ABI

  23. Change in the energy of Jahn-Teller configurations of vacancy-donor complexes induced by uniaxial strain

    N. S. Averkiev, A. A. Gutkin, M. A. Reshchikov

    СтатьяRare-earth and actinide compoundsSemiconductors1999Цитирований: 0
    ABI

  24. Theory of photovoltaic effects in crystals without an inversion center

    Rustam Yavkachovich Rasulov, Yu. E. Salenko, A. Tukhtamatov +2

    СтатьяSolid-state spectroscopy and crystallographySemiconductors1999Цитирований: 0
    ABI

  25. Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures

    V. M. Botnaryuk, Yu. V. Zhilyaev, Yu. V. Rud +1

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors1999Цитирований: 0
    ABI