K. M. Doshchanov

Работ: 3

Physicotechnical Institute Science and Industrial Union “Physics-Sun,”, Uzbekistan Academy of Sciences, 700084, Tashkent, Uzbekistan

1. Temperature dependence of the electrical properties of polycrystalline silicon in the dark and in sunlight

   K. M. Doshchanov

   СтатьяThin-Film Transistor TechnologiesSemiconductors1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000100

2. Charge-transfer theory in polycrystalline semiconductors with deep impurity centers

   K. M. Doshchanov

   СтатьяThin-Film Transistor TechnologiesSemiconductors1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000190

3. Nonlinear and dynamic properties of charge transport in polycrystalline silicon under optical illumination

   K. M. Doshchanov

   СтатьяThin-Film Transistor TechnologiesSemiconductors2001Цитирований: 0

   ABIABI:AkademIndex/openalex/2001.article.000246