Change in the energy of Jahn-Teller configurations of vacancy-donor complexes induced by uniaxial strain

Estimates are obtained for the energy splitting of equivalent Jahn-Teller configurations of the light-absorbing state of 〈vacancy Ga (V Ga)〉-〈tellurium (TeAs)〉 complexes in n-GaAs generated by uniaxial stress along the directions [111] and [001]. These estimates are based on measuring the stress dependence of the polarization of photoluminescence associated with these complexes at T⋍2 and 77 K. A phenomenological model of the complexes, which describes how the donor (TeAs) and the Jahn-Teller effect modify the initial t 2-orbitals of the vacancy component of the complex, is discussed as the effect of uniaxial strain. This model makes it possible to relate measured values of the energy splitting of equivalent configurations relative to the splitting of the original t 2-state of the vacancy arising from the presence of the donor and the Jahn-Teller effect. Comparison of calculations with experimental data shows that the contribution of the Jahn-Teller effect to the formation of the light-absorbing state of the complex V GaTeAs exceeds the contribution due to the donor effect, although the two effects are comparable.

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