N. S. Averkiev

Работ: 3

Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnichiskaya ul. 26, St. Petersburg, 194021, Russia

1. Drift mobility of carriers in porous silicon

   N. S. Averkiev, L. P. Kazakova, É. A. Lebedev +1

   СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2001Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.556185

2. Change in the energy of Jahn-Teller configurations of vacancy-donor complexes induced by uniaxial strain

   N. S. Averkiev, A. A. Gutkin, M. A. Reshchikov

   СтатьяRare-earth and actinide compoundsSemiconductors1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000107

3. Quantum corrections to resistance of microblock tellurium at ultralow temperatures under phonon freezing conditions

   I. I. Farbshteǐn, A. V. Chernyaev, D. V. Shamshur +1

   СтатьяSemiconductor Quantum Structures and DevicesJournal of Experimental and Theoretical Physics2010Цитирований: 0

   ABIABI:AkademIndex/openalex/2010.article.000407